Systems and method for creating crystalline parts having a desired primary and secondary crystallographic orientations are provided. One embodiment may take the form of a method of manufacturing a part having a crystalline structure. The method includes melting aluminum oxide and drawing the melted aluminum oxide up a slit. Additionally, the method includes orienting the seed crystal relative to a growth apparatus such that a crystalline structure grows having a desired primary plane and a desired secondary plane orientation. Moreover, the method includes pulling the crystal as it forms to create a ribbon shaped crystalline structure and cutting a part from the crystalline structure.

A method is disclosed for slicing an ingot by which wire rows are formed by using a wire that is spirally wound between a plurality of wire guides and travels in an axial direction. An ingot is pressed against the wire rows while supplying a working fluid to a contact portion of the ingot and the wire, thereby slicing the ingot into wafers, and a ratio of a wire new line feed amount per unit time in slicing of a slicing start portion of a first ingot to that in slicing of a centration portion of the same at the time of slicing the ingot after replacement of the wire is controlled to be ½ or less of the ratio at the time of slicing second and subsequent ingots after the replacement of the wire.

There is provided a method for manufacturing a group III nitride substrate, including: preparing a plurality of seed crystal substrates formed into shapes that can be arranged with side surfaces opposed to each other; bonding the plurality of seed crystal substrates on a base material by an adhesive agent in an appearance that the seed crystal substrates are arranged with the side surfaces opposed to each other; growing a group III nitride crystals above main surfaces of the plurality of seed crystal substrates, so that crystals grown on each main surface are integrally combined each other; and obtaining a group III nitride substrate formed of the group III nitride crystal.

A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the ltd object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

A roller module is used for driving a sawing wire to slice an ingot into multiple wafers, and includes two spaced apart main rollers and an auxiliary roller. Each main roller has a rotating axis and a diameter. An imaginary horizontal plane is defined to pass through the rotating axes of the main rollers. Two imaginary vertical planes are defined to be perpendicular to the imaginary horizontal plane and respectively pass through the rotating axes of the main rollers. The auxiliary roller is disposed above the imaginary horizontal plane and between the imaginary vertical planes. An uppermost side of the auxiliary roller is not lower than an uppermost side of each main roller. The auxiliary roller has a diameter smaller than one half of that of each main roller.

A RAMO.sub.4 substrate is formed from single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

A RAMO.sub.4 substrate is formed from single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

Examples of gemstone verification are described herein. In one example, for processing a gemstone, pre-stored marking coordinates associated with a gemstone ID are obtained, the pre-stored marking coordinates generated during planning phase of the processing. Further, real-time marking coordinates for the gemstone to be processed are also obtained. An identity of the gemstone is verified based on a comparison of the pre-stored marking coordinates with the real-time marking coordinates. Further, information, including cutting parameters, associated with the gemstone ID of the gemstone is retrieved in response to a valid verification of the identity of the gemstone, for processing the gemstone.

An Si substrate manufacturing method includes a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to Si to a depth, equivalent to a thickness of an Si substrate to be manufactured, from a flat surface of an Si ingot and irradiating the Si ingot with the laser beam while relatively moving the focal point and the Si ingot in a direction <110> parallel to a cross line at which a crystal plane {100} and a crystal plane {111} intersect or a direction [110] orthogonal to the cross line, and an indexing feed step of executing indexing feed of the focal point and the Si ingot relatively in a direction orthogonal to a direction in which the separation band is formed.

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), fixing the receiving layer (10) for holding the solid layer (4) to the solid body (2), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.