A method for preparing hot stamping cylindrical EPE sliver, including the following steps: Step 1, prepare a hot stamping die: an annular pattern, which is annular and will be stamped on the surface of a hollow cylindrical EPE sliver, is expanded as a planar pattern to prepare a flat stamping die. Step 2, the flat stamping die is installed on a heating device of a hot stamping machine, and a hot stamping temperature is adjusted. Step 3, the hollow cylindrical EPE sliver is set in a rotation axis of the stamping machine. Step 4, form a figuration by extruding each other when the rotating EPE sliver figuration passes through said hot stamping pattern on said stamping die. Step 5, the rotational speed of the rotation axis and the horizontal speed are set equally. Step 6, start-up a hot stamping button, therefore resulting in perfect hot stamping in 360 degree.

An under layer film having excellent surface planarity is provided. In one aspect, the under layer film-forming composition for imprints includes a (meth)acrylic resin (A) containing an ethylenic unsaturated group (P) and a nonionic hydrophilic group (Q), and having a weight average molecular weight of 1,000 or larger; and a solvent (B), the resin (A) having an acid value of smaller than 1.0 mmol/g. In another aspect, the under layer film-forming composition for imprints includes a (meth)acrylic resin (A2) containing an ethylenic unsaturated group (P), and containing, as a nonionic hydrophilic group (Q), a cyclic substituent (Q2) having a carbonyl group in the cyclic structure thereof, with a weight average molecular weight of 1,000 or larger; and a solvent (B).

The present invention provides a process for modifying the surface of a polyvinyl alcohol film or fabric by applying heat and pressure to the film or fabric to increase the moisture on the surface which is held by the fabric and to coalesce the surface fibers and reduce the porosity of the surface.

A method can include placing a substrate over a chucking region, wherein the substrate has a primary surface; quantifying a distortion in the substrate, the lithographic template, the imprint apparatus, or any combination thereof; and dispensing a formable material based at least in part on the distortion. The distortion can include a deviation in planarity, a magnification or orthogonality error or the like. In another aspect, an imprint apparatus can include a substrate holder including a chucking region; a template having an imprint surface that includes protrusions, wherein the protrusions define a primary surface; and a processor configured to determine an amount of a formable material to dispense in a particular area based at least in part on an distortion in the substrate, the lithographic template, the imprint apparatus, or any combination thereof.

A template for imprint lithography can include a body. The body can include a base surface and have a recession extending from the base surface lying along a base plane, the recession including a main portion having a tapered sidewall. In a particular embodiment, the recession includes an intermediate portion having an intermediate sidewall. The intermediate sidewall is rounded or at least part of the intermediate sidewall lies at a different angle as compared to an average tapered angle of the main portion. In another aspect, a method of fabricating a semiconductor device can include forming a patterned resist layer having a tapered sidewall over a substrate having device layers; patterning the device layers using the patterned resist layer; and etching portions of at least some of device layers to expose lateral portions of the at least some device layers. The template is well suited for forming 3D memory arrays.

A template for imprint lithography can include a body. The body can include a base surface and have a recession extending from the base surface lying along a base plane, the recession including a main portion having a tapered sidewall. In a particular embodiment, the recession includes an intermediate portion having an intermediate sidewall. The intermediate sidewall is rounded or at least part of the intermediate sidewall lies at a different angle as compared to an average tapered angle of the main portion. In another aspect, a method of fabricating a semiconductor device can include forming a patterned resist layer having a tapered sidewall over a substrate having device layers; patterning the device layers using the patterned resist layer; and etching portions of at least some of device layers to expose lateral portions of the at least some device layers. The template is well suited for forming 3D memory arrays.

A method for applying a layer having a relief on a substrate includes, steps of securing the substrate, applying a layer of a curable liquid on the substrate, bringing a mould having a relief being the negative of the relief to be provided on the substrate, into contact with a part of the upper surface of the liquid layer, curing the liquid layer while the mould is in contact with the liquid and separating the mould from the substrate. Initially the mould is brought into contact with the liquid in a bent position while the substrate is kept flat and subsequently the mould is brought into contact over an increasing surface area keeping the mould in a bent position until the complete liquid layer is in contact with the mould.

Provided are a super water repellent polymer hierarchical structure, a heat exchanger having super water repellency, and a manufacturing method thereof A super water repellent polymer hierarchical structure can be simply and repeatedly manufactured by using only a method for utilizing a super water repellent hierarchical structure and mechanically molding a polymer material thereon. In addition, a heat exchanger having super water repellency can be provided by providing super water repellency on the fin surface of a heat exchanger by using a dip method and vacuum drying.

A nanoimprint lithography method to remove uncured pretreatment composition from an imprinted nanoimprint lithography substrate. The method includes disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating and disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate. A composite polymerizable coating is formed on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, and the composite polymerizable coating is contacted with a nanoimprint lithography template. The composite polymerizable coating is polymerized to yield a composite polymeric layer and an uncured portion of the pretreatment coating on the nanoimprint lithography substrate, and the uncured portion of the pretreatment coating is removed from the nanoimprint lithography substrate.

An imprint lithography system that pressurizes and depressurizes an air cavity behind a retained imprint template or substrate so as to deflect the template or substrate to aid in filling the template pattern with fluid resist and/or separating the template from the cured resist on the substrate. The system includes a controller, pressure sensors, and an impedance valve for modulating the air cavity pressure so as to reduce pressure wave oscillations within the cavity that otherwise negatively impact overlay accuracy control, fluid spread control and separation control.