A process for making a card includes the steps of forming a core layer having a first surface and a second surface, disposing an uncured decorative ceramic layer of ceramic particles disposed in a resin binder over the first surface of the core layer, such as by spray coating, and curing the uncured decorative ceramic layer to form a cured decorative ceramic layer. Card products of the process may have a core layer of metal, ceramic, or a combination thereof that form a bulk of the card.

A process for making a card includes the steps of forming a core layer having a first surface and a second surface, disposing an uncured decorative ceramic layer of ceramic particles disposed in a resin binder over the first surface of the core layer, such as by spray coating, and curing the uncured decorative ceramic layer to form a cured decorative ceramic layer. Card products of the process may have a core layer of metal, ceramic, or a combination thereof that form a bulk of the card.

An alloy member includes a base member that includes a plurality of recesses in a surface and is constituted by an alloy material containing chromium, a plurality of embedded portions that are respectively disposed in the plurality of recesses, and a coating layer that covers the base member and is connected to the plurality of embedded portions. An average value of actual lengths of line segments of the plurality of embedded portions is longer than an average value of straight lengths of straight lines of the plurality of embedded portions in a cross-section of the base member along a thickness direction of the base member. The average value of the actual lengths is 1.10 times or more the average value of the lengths of the straight lines.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A seal includes a ceramic matrix composite ply having woven ceramic-based fibers in a ceramic-based matrix. The ceramic matrix composite ply has at least one bend formed about a bend axis and defines at least one rounded portion. A sealed assembly and a method of making a seal are also disclosed.

A method of forming a ceramic matrix composite with being impregnated with molten metal includes: stacking a plurality of fiber layers that are layers of reinforced fibers impregnated with base resin to form a laminate in which a matrix layer containing fibers extending in a direction of impregnation with the molten metal is disposed between the fiber layers; forming an impregnation path in the matrix layer entirely in an in-plane direction perpendicular to a direction of the stacking in the laminate by carbonizing the formed laminate; and impregnating, with the molten metal, the laminate in which the impregnation path has been formed.

The present invention is directed to a curable composition including: an isocyanate-functional prepolymer; an epoxy-containing component present in an amount of at least 10 percent by weight of the composition; and a latent curing agent having an ability to react with at least one of the isocyanate-functional prepolymer and the epoxy-containing component upon exposure to an external energy source. The present invention is also directed to methods of making the compositions, methods of coating a substrate, methods of adhering substrates and coated substrates.

The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.

A solid electrolyte includes partially stabilized zirconia in which a stabilizer forms a solid solution in zirconia. The partially stabilized zirconia includes at least monoclinic phase particles and cubic phase particles as crystal particles that configure the partially stabilized zirconia, and an abundance ratio of the monoclinic phase particle is 5 to 25% by volume. The partially stabilized zirconia includes stabilizer low-concentration phase particles of which concentration of the stabilizer at a particle center is equal to or less than 1 mol %, as the crystal particles. The stabilizer low-concentration phase particles have a particle-size distribution of number frequency thereof having a peak at which an average particle size is 0.6 to 1.0 μm, and a particle size at 10% of a cumulative number is 0.5 μm or greater, and of the overall low-concentration phase particles, 50% by volume or greater belong to the peak.