This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m.Math.K and a volume resistivity of at least 110.sup.8 .Math.cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon.

As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.

A bonding apparatus includes a substrate holder holding the second substrate; a pusher pushing a back surface of the second substrate; a substrate support unit including a support talon supporting a circumferential edge portion of the first substrate to oppose the second substrate with a prescribed spacing between the second substrate and the circumferential edge portion of the first substrate; and a controller controlling a lifting/lowering operation of the pusher. The pusher pushes one prescribed point of the back surface of the second substrate, the one prescribed point corresponding to a position where a distance between a bonding surface of the first substrate and a bonding surface of the second substrate is shorter than a distance from the circumferential edge portion of the bonding surface of the first substrate to the bonding surface of the second substrate.

A bonding step in a method of producing a bonded body includes a first bonding step of forming a sealing layer (4) by irradiating a sealing material (6) belonging to an inner group (IG) with a laser beam (L), and a second bonding step of forming a sealing layer (4) by irradiating a sealing material (6) belonging to an outer group (OG) with the laser beam (L) after the first bonding step.

A graphite-silicon composite, including: graphite; silicon; and an intermediate layer that is located between the graphite and the silicon, wherein the intermediate layer includes oxygen, carbon and silicon. Furthermore, provided is a method for producing a graphite-silicon composite, including: layering graphite and silicon; and heating the layered graphite and silicon while applying pressure to them, wherein, during heating the layered graphite and silicon while applying pressure to them, an oxygen concentration in the atmosphere is adjusted to 0.2 vol %, the applied pressure is adjusted to 24.5 MPa or higher, and the heating temperature is adjusted to 1260 C. or higher.

A display device includes a display panel which contains an LED which emits light, a first layer containing a porous polymer and disposed on the display panel, a second layer containing a metal halide and disposed on the first layer, and a lenticular lens disposed on the display panel, where the first layer has a first refractive index and the second layer has a second refractive index less than the first refractive index.

A temporary adhesive material for wafer processing temporarily bonds a support to a wafer having a circuit-forming front and back surface for processing, including a composite temporary adhesive material layer having at least a two-layer structure of first and second temporary adhesive layers, the first layer including a thermoplastic resin layer that is releasably adhered to the wafer's front surface; and the second layer including a photo-curing siloxane polymer layer laminated on the first layer. A wafer processing laminate, a temporary adhesive material for wafer processing, and a method for manufacturing a thin wafer using the same, which suppress wafer warpage at the time of heat-bonding, have excellent delaminatability and cleaning removability, allow layer formation with uniform film thickness on a heavily stepped substrate, are highly compatible with steps of forming TSV, etc., have excellent thermal process resistance, and are capable of increasing productivity of thin wafers.

Systems and methods for flow cells are provided. Flow cells may encompass a range of fluidic devices for various applications ranging from microfluidic systems to bulk phase flow systems. Flow cells may comprise one or more components for passive or active fluid transfer. Descriptions are provided for advantageous methods of fabricating flow cells for particular applications such as biological assays. Provided is a composition, comprising a first substrate comprising a first covalently-bound ligand; and a second substrate comprising a second covalently-bound ligand; wherein the first covalently-bound ligand and the second covalently-bound ligand are covalently bonded to form a heterocyclic compound. Also provided is a flow cell device, comprising: a first substrate comprising a microfabricated surface; and a second substrate comprising a non-patterned surface; wherein the first substrate is joined to the second substrate to form an enclosure; and wherein the microfabricated surface comprises at least one chamber, wherein the chamber comprises a microarray of active sites with specific functionalization separated by an optically resolvable distance and a functionalized surface comprising a passivating group or a blocking group; and wherein each active site of the microarray of active sites comprises a capture agent.

Systems and methods for flow cells are provided. Flow cells may encompass a range of fluidic devices for various applications ranging from microfluidic systems to bulk phase flow systems. Flow cells may comprise one or more components for passive or active fluid transfer. Descriptions are provided for advantageous methods of fabricating flow cells for particular applications such as biological assays.