Systems, devices, and methods for high die stack packages with secondary interposers are provided herein. A die stack package can include a first substrate, a first die stack carried by the first substrate, a second die stack carried by the first substrate, a second substrate carried by the first die stack and the second die stack, a third die stack carried by the second substrate, a fourth die stack carried by the second substrate, and one or more vertical wires electrically coupling the first substrate and the second substrate. Each of the first, second, third, and fourth die stacks can include a plurality of dies stacked in a cascading arrangement. In some embodiments, the first and second die stacks are each electrically coupled to the first substrate. In some embodiments, the first and second die stacks are each electrically coupled to the second substrate.

Systems, devices, and methods for high die stack packages with vertical die-to-die interconnects are provided herein. A die stack package can include a substrate, a lower die stack carried by the substrate, a spacer carried by the substrate, an upper die stack carried by the spacer, a plurality of wire bonds, and a plurality of vertical wires. The lower die stack can include a plurality of lower dies stacked in a cascading arrangement. The upper die stack can include a plurality of upper dies stacked in a cascading arrangement in a same direction as the plurality of lower dies. The wire bonds can electrically couple adjacent ones of the lower dies. An nth vertical wire can extend vertically between and electrically couple an nth upper die and an nth lower die. In some embodiments, the die stack package further includes an input-and-output extender carried by the substrate.

Systems, devices, and methods for high die stack packages with modular structures are provided herein. A die stack package can include a substrate, a proximal unit carried by the substrate, and a distal unit carried by the proximal unit. The proximal unit can include first and second proximal die stacks, a proximal portion of a modular structure, and proximal wire bonds electrically coupling the first and second proximal die stacks to conducting elements of the modular structure. The distal unit can include first and second distal die stacks, a distal portion of the modular structure, and distal wire bonds electrically coupling the first and second distal die stacks to the conducting elements of the modular structure. In some embodiments, the die stack package further includes one or more modular units stacked between the proximal unit and the distal unit.

According to some embodiments, a semiconductor package may include a first semiconductor chip; a second semiconductor chip disposed on a first semiconductor chip; a wall structure disposed on the first semiconductor chip and spaced apart from the second semiconductor chip in a first direction; and a mold layer covering the first and second semiconductor chips, wherein the first semiconductor chip includes a transceiver disposed thereon and spaced apart from the second semiconductor chip, the mold layer has an opening exposing the transceiver, the wall structure is disposed in the opening and is in contact with an inner wall of the mold layer exposed to the opening, the mold layer has a first height, and the wall structure has a second height smaller than the first height.

Methods, systems, and devices for pass-through power delivery for logic-on-top semiconductor systems are described. A semiconductor system may be configured with a two-dimensional pattern of power delivery conductors that pass through semiconductor components of a stack (e.g., through one or more memory stacks), providing a more-distributed delivery of power to a logic component bonded with the stack. The power delivery conductors may include through-substrate vias that bypass circuitry of the stack, and thus may be allocated for providing power to the logic component. Such techniques may be combined with a redistribution component, such as a package substrate or interposer (e.g., opposite the logic component in the heterogeneous stack), which may include redistribution conductors that convert from relatively fewer interconnections at a surface of the semiconductor system (e.g., for solder interconnection) to relatively more interconnections at a surface bonded with the stack (e.g., for hybrid bonding interconnection).

Methods, systems, and devices for power and signal distribution in stacked semiconductor systems are described. A semiconductor system may include a distribution component configured to communicate power, signals, or both with a logic component and memory component(s) of the semiconductor system. The distribution component may include power delivery circuitry to provide separate power to the memory component(s) and the logic component, data serialization/deserialization circuitry to communicate data signals with the logic component, or both. The distribution component may convey power, data signals, or both to the logic component using conductive vias that pass through the memory components and bypass interface circuitry of the memory component(s). The distribution component may include clock circuitry that receives, generates, or both, one or more clock signals and provides the one or more clock signals for I/O functionality of the distribution component, the logic component, the interface circuitry, or any combination thereof.

Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described in combination with stacked technology with CMOS ASIC wafters. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. Stacking technology can be used to address incompatibility of ReRAM processing and CMOS ASICs processing.

In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, a non-conductive layer aligned with the semiconductor layer, and a contact structure in the non-conductive layer. The non-conductive layer electrically insulates the contact structure from the semiconductor layer. The second semiconductor structure includes a transistor.

A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.

A semiconductor device includes first, second and third stacked chips with a first, second and third substrate, respectively, at least three first, second and third logical circuits, respectively, and at least two first, second and third vias, respectively, and a fourth chip stacked on the third chip having a fourth substrate, and at least three fourth logical circuits. First and second ones of the first to third logical circuits of the first to fourth chips are each configured to perform a first and second logical operation, respectively, on a first and second address input signal, respectively, received at the respective chip to thereby output a first and second address output signal, respectively. Third ones are each configured to activate the respective chip based on at least the second address output signal transmitted within the respective chip.