A manufacturing method of a semiconductor device includes following steps. A first semiconductor package is disposed to a carrier through a first die attach film (DAF) disposed therebetween. The first semiconductor package and the second semiconductor package are encapsulated with an encapsulation material. The carrier is flipped to attach the front surface of the first semiconductor package and the front surface of the second semiconductor package to a first redistribution structure. The carrier, the first DAF, and the second DAF are removed from the first semiconductor package and the second semiconductor package to expose back surfaces of the first and second semiconductor packages from the encapsulation material. A first thermal interface material (TIM) layer and a second TIM layer are respectively disposed on the back surfaces of the first and second semiconductor packages.

A semiconductor packaging structure includes an encapsulation layer, a die, a first metal layer, a second metal layer and an electrical connection component. The die is disposed in the encapsulation layer. The first metal layer and the second metal layer are disposed in the encapsulation layer. The first metal layer and the second metal layer are disposed on opposite sides of the die, respectively. The electrical connection component is disposed in the encapsulation layer. The first metal layer is electrically connected with the second metal layer through the electrical connection component. The electrical connection component includes a non-metal core and a metal film located on a surface of the non-metal core.

Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, and an encapsulant. The substrate has a lower surface and an upper surface opposite to the lower surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate. The encapsulant includes a first portion penetrating the substrate at a central region of the substrate and a second portion penetrating the substrate at a peripheral region of the substrate.

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, and an encapsulant. The substrate has a lower surface and an upper surface opposite to the lower surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate. The encapsulant includes a first portion penetrating the substrate at a central region of the substrate and a second portion penetrating the substrate at a peripheral region of the substrate.

An electronic package is provided, in which an electronic element is arranged on a carrier structure having a plurality of wire-bonding pads arranged on a surface of the carrier structure, and a plurality of bonding wires are connected to a plurality of electrode pads of the electronic element and the plurality of wire-bonding pads. Further, among any three adjacent ones of the plurality of wire-bonding pads, a long-distanced first wire-bonding pad, a middle-distanced second wire-bonding pad and a short-distanced third wire-bonding pad are defined according to their distances from the electronic element. Therefore, even if the bonding wires on the first to third wire-bonding pads are impacted by an adhesive where a wire sweep phenomenon occurred when the flowing adhesive of a packaging layer covers the electronic element and the bonding wires, the bonding wires still would not contact each other, thereby avoiding short circuit problems.

An integrated circuit die includes a semiconductor substrate, an interconnect layer including bonding pads, and a passivation layer covering the interconnect layer and including openings at the bonding pads. A conductive redistribution layer including conductive lines and conductive vias is supported by the passivation layer. An insulating layer covers the conductive redistribution layer and the passivation layer. Channels formed in an upper surface of the insulating layer delimit pedestal regions in the insulating layer. A through via extends from an upper surface of each pedestal region through the pedestal region and the insulating layer to reach and make contact with a portion of the conductive redistribution layer. A metal pad is formed at the upper surface of each pedestal region in contact with its associated through via. The metal pads for leads of a quad-flat no-lead (QFN) type package.

A semiconductor package includes a semiconductor chip including a semiconductor substrate having an active layer, ground chip pads on the semiconductor substrate, and signal chip pads on the semiconductor substrate and a package substrate supporting the semiconductor chip, the package substrate including a substrate insulating layer, a plurality of signal line patterns extending in the substrate insulating layer and electrically connected to the signal chip pads, and a plurality of ground line patterns extending in the substrate insulating layer at a same level as a level of the plurality of signal line patterns and electrically connected to the ground chip pads. At least one of the plurality of ground line patterns extends between the plurality of signal line patterns.

A semiconductor package according to some example embodiments includes a substrate, a first semiconductor chip and a plurality of memory structures on the substrate, and a through via penetrating at least one of the plurality of memory structures. The plurality of memory structures are stacked in a vertical direction, the vertical direction being perpendicular to an upper surface of the substrate, each of the plurality of memory structures includes a buffer die, a plurality of memory dies stacked on the buffer die, and a molding member covering the buffer die and the plurality of memory dies, and the through via includes a mold through via that penetrates the molding member.