A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.

A semiconductor device includes a substrate and an interconnection layer disposed on the substrate. The interconnection layer includes a plurality of etch-stop layers, a plurality of first dielectric layers, and a plurality of conductive layers. The first dielectric layers are disposed on the plurality of etch-stop layers, wherein the plurality of first dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m.Math.K) or more. The conductive layers are embedded in the first dielectric layers.

A semiconductor device is provided. The semiconductor device includes an interlayer dielectric layer; and a plurality of metal contacts formed in the interlayer dielectric layer. The plurality of metal contacts include a plurality of shallow metal contacts having a first depth, and a plurality of deep metal contacts having a second depth that is greater than the first depth, wherein a first one of the shallow metal contacts overlaps and directly contacts a first one of the deep metal contacts, and wherein the plurality of metal contacts have an equal spacing therebetween.

A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a first energy removable structure disposed in the first dielectric layer. The semiconductor device structure also includes a second dielectric layer disposed over the first dielectric layer, and an N.sup.th dielectric layer disposed over the second dielectric layer. The N is an integer greater than 2. The semiconductor device structure further includes a first conductor disposed in the N.sup.th dielectric layer, and an (N+1).sup.th dielectric layer disposed over the N.sup.th dielectric layer. A top surface of the first conductor is exposed by a first opening, and a top surface of the first energy removable structure is exposed by a second opening.

A reticle-stitched integrated circuit is provided. The reticle-stitched integrated circuit extends over a first die area and a second die area of an integrated circuit wafer. While individually the first die area and the second die area are within their respective reticle limits, collectively the first die area and the second die area exceed the reticle limit. A first layer of the reticle-stitched integrated circuit may have communication wires that remain exclusively in only one of the first die area and the second die area. A second layer of the reticle-stitched integrated circuit may have communication wires that overlap the first die area and the second die area, thereby allowing communication between the two die areas and enabling the reticle-stitched integrated circuit to exceed the limit of the reticle.

A method of manufacturing a semiconductor structure includes the following steps. A bit line structure is formed over a substrate. A first spacer layer is formed on a first sidewall of the bit line structure. A second spacer layer is formed on a second sidewall of the first spacer layer. A third spacer layer is formed on a third sidewall of the second spacer layer. An oxidation process is performed on the second spacer layer, thereby forming an oxidized portion and a remaining portion in the second spacer layer, in which the oxidized portion is between the remaining portion and the third spacer layer. A fourth spacer layer is formed on a fourth sidewall of the third spacer layer.

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

A device includes a photonic cryo die containing photonic components, and an electronic die bonded to the photonic die, the electronic die containing electrically conductive through substrate vias. The electrically conductive through silicon vias can electrically connect a backside redistribution layer to control circuitry for operation in a cryogenic environment in a compact package that exhibits low resistance and low parasitic capacitance.

Reliability is improved in a semiconductor device in which an annular trench is formed around a through hole. A semiconductor device includes a semiconductor substrate, a through wiring, a back surface insulating film, and an annular trench. A wiring layer is formed on a front surface of the semiconductor substrate. The through hole penetrates the semiconductor substrate. The through wiring is formed along a side surface of the through hole. The back surface insulating film covers a back surface of the semiconductor substrate with respect to the front surface. The annular trench surrounds the periphery of the through hole when viewed from a direction perpendicular to the back surface, and a cavity closed by the back surface insulating film when viewed from the direction parallel to the back surface is formed inside.

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.