Methods and apparatuses for precise trimming of silicon-containing materials are provided. Methods involve oxidizing silicon-containing materials and thermally removing the oxidized silicon-containing materials at particular temperatures for a self-limiting etch process. Methods also involve a surface reaction limited process using a halogen source and modulated temperature and exposure duration to etch small amounts of silicon-containing materials. Apparatuses are capable of flowing multiple oxidizers at particular temperature ranges to precisely etch substrates.

A semiconductor package manufacturing apparatus is provided, which comprises a pin holder including a plurality of through holes, a plurality of ejector pins corresponding to the plurality of through holes, a first pin disk including a first protrusion pattern having a first arrangement configured to adjust heights of the plurality of ejector pins, a second pin disk including a second protrusion pattern having a second arrangement configured to adjust the heights of the plurality of ejector pins, and a controller configured to select at least a portion of the plurality of ejector pins to protrude toward an upper portion of the pin holder by selecting one of the first and second pin disks.

A substrate processing apparatus includes: a substrate transfer controller that determines a placement condition of the substrate holder and a substrate placement position on the substrate holder based on a model, a substrate transfer position setting value, and a substrate holder setting value from the film thickness measurement result, and operates the substrate transfer device; an eccentricity status analysis unit that analyzes an eccentric state from a film thickness variation state; a learning function unit that updates the model based on the eccentric state; and an optimization function unit that updates the placement condition of the substrate holder and the substrate placement position on the substrate holder based on the updated model, the substrate transfer position setting value, and the substrate holder setting value.

A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.

Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.

An apparatus for transferring light-emitting diodes (LEDs) includes a backing board for supporting a backplane, a sealing member formed on the backing board around a periphery of the backplane, a transparent panel formed on the sealing member such that a space is formed between the backing board and the transparent panel, and a vacuum source for drawing a vacuum on the space.

A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.

Provided is a method capable of efficiently polishing the front and back sides of a carrier plate unused after manufacture, which is used in a double-sided polishing process for semiconductor wafers. The method comprises: sandwiching a carrier plate unused after manufacture and to be polished between an upper surface plate and a lower surface plate in the double-sided polishing apparatus, and supplying a polishing liquid while relatively rotating the carrier plate to be polished, the upper surface plate, and the lower surface plate to polish both sides of the carrier plate to be polished, wherein a polishing pad including, on its surface, an abrasive grain-containing layer in which abrasive grains of 2 m or more in grain size are embedded is used as a polishing pad in a double-sided polishing apparatus.

A wafer processing apparatus includes a rotating chuck rotatably installed on a driver, a vacuum chuck which is disposed on the rotating chuck and on which a wafer is seated, a chuck module installed in the rotating chuck to fix the wafer to the vacuum chuck, and a moving module configured to move the vacuum chuck or the chuck module to increase a gap between adjacent dies of the wafer.

A semiconductor device manufacturing device (10) includes a stage (12), an installing head (14) that has a chip holding surface (26) and disposes a chip (100) on a substrate (110), a measuring mechanism (16) that measures a tilt angle of the chip (100) loaded on an installing surface (112) of the substrate (110) by the installing head (14) with respect to the installing surface (112) as a detection tilt angle Sd, a holding surface adjusting mechanism (18) that changes a holding surface tilt angle Sb which is a tilt angle of the chip holding surface (26) with respect to a loading surface (21), and a controller (20) that calculates a correction amount C of the holding surface tilt angle Sb based on the detection tilt angle Sd and changes the holding surface tilt angle Sb by the holding surface adjusting mechanism (18) according to the calculated correction amount C.