An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.

A substrate treating apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates at a time, a posture turning unit configured to turn and change the orientation of the substrates to be processed by the batch-type processing unit, while the substrates are wetted with deionized water, a first transport unit that transports the substrates, processed by the batch-type processing unit, to the posture turning unit, a second transport unit that transports the substrates turned horizontally by the posture turning unit to enable them to be subjected to treatment with the hand unit and a cleaning and drying unit configured to perform cleaning and drying treatment at the hand unit.

The present invention relates to a method for exchanging heat with an object said method comprising using a heat transfer fluid wherein said heat transfer fluid comprises one or more chemical compounds having the general formula: (I) wherein: R.sub.1, R.sub.2, R.sub.3, R.sub.4 can be the same or different, linear or branched, partially fluorinated alkyl groups having a C1-C6 carbon chain. ##STR00001##

A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) measuring an amount of a molding powder; (b) controlling the amount of a molding powder; and (c) dispensing the molding powder on an assembly structure including a carrier and at least one semiconductor device disposed on the carrier.

The present disclosure relates to a flow resistance generating unit that generates a flow resistance in a pipe to solve a flow imbalance problem due to a bent pipe and stabilizes an internal airflow, and a substrate treating apparatus including the same. The substrate treating apparatus comprises a fluid supply unit for supplying fluid for treating a substrate and including an upper fluid supply module for supplying the fluid to an upper portion of the substrate, a lower fluid supply module for supplying the fluid to a lower portion of the substrate, and a supply pipe connected to at least one of the upper fluid supply module and the lower fluid supply module, and a flow resistance generating unit installed in the supply pipe and for generating a flow resistance with respect to the fluid passing through the supply pipe.

An example of an etching method according to the present disclosure, includes: performing a first process which includes forming a first layer containing halogen or holding the substrate in a gas atmosphere containing halogen; and performing a second process which includes removing a portion of the first layer and a portion of the substrate under the portion of the first layer by supplying the portion of the first layer with ions sourced from a solid material.

A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

According to an embodiment of the present invention, a method for processing a substrate through a heater that heats the substrate to perform a semiconductor process, the method comprising: inputting, into a correlation formula of at least one independent variable, which is a parameter related to the heater, and a dependent variable including a measured temperature of the heater, a measurement value corresponding to the independent variable, and calculating a predicted temperature of the heater; and applying a Kalman filter to the predicted temperature to calculate an estimated temperature.

A mapping device capable of detecting a stored state of a square shaped plate-form object including: a first detection part having a first detection axis which crosses a first side and a second side perpendicular to the first side object to detect a first corner thickness; a second detection part having a second detection axis which crosses the first and third sides of the object to detect a second corner thickness; a first information acquiring unit acquiring a first information relating to a warpage amount in the first direction of the object; an adjustment calculation unit calculating an adjusted detection value relating to the thickness of the object in the first direction by adjusting, based on the first information, a sum of the first and second corner thicknesses or an average thereof; and a distinguishing unit distinguishing the stored state of the object using the adjusted detection value.