A memory device includes a lower source-level semiconductor layer, a source contact layer, and an upper source-level semiconductor layer, an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, the upper source-level semiconductor layer, and the source contact layer, and a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor layer having a surface segment that contacts the source contact layer. In one embodiment, the upper source-level semiconductor layer may be locally thickened to provide sufficient etch resistance during formation of a lateral isolation trench. In another embodiment, a sacrificial line trench fill structure may be employed as an etch stop structure during formation of a lateral isolation trench.

A semiconductor device includes: a multilayered wiring layer including an insulation layer (30) and a diffusion prevention layer (21, 22, 23, 24) stacked alternately and including a wiring layer (11, 12, 13) internally; a gap section (50) disposed at least in a portion of the insulation layer (30); and a support section (60) disposed at least in a portion of the gap section (50) and configured to support the multilayered wiring layer.

A bonding apparatus includes a first holder, a second holder, a moving unit, a housing, an interferometer, a first gas supply and a second gas supply. The first holder is configured to attract and hold a first substrate. The second holder is configured to attract and hold a second substrate. The moving unit is configured to move a first one of the first holder and the second holder in a horizontal direction with respect to a second one thereof. The interferometer is configured to radiate light to the first one or an object moved along with the first one to measure a horizontal distance thereto. The first gas supply is configured to supply a clean first gas to an inside of the housing. The second gas supply is configured to supply a second gas to a space between the interferometer and the first one or the object.

A bonding apparatus includes a first holder, a second holder, a moving unit, a housing, an interferometer, a first gas supply and a second gas supply. The first holder is configured to attract and hold a first substrate. The second holder is configured to attract and hold a second substrate. The moving unit is configured to move a first one of the first holder and the second holder in a horizontal direction with respect to a second one thereof. The interferometer is configured to radiate light to the first one or an object moved along with the first one to measure a horizontal distance thereto. The first gas supply is configured to supply a clean first gas to an inside of the housing. The second gas supply is configured to supply a second gas to a space between the interferometer and the first one or the object.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate having a first active surface and a first inactive surface opposite to each other, a plurality of through electrodes penetrating the first semiconductor substrate, and a rear cover layer covering the first inactive surface, a second semiconductor chip stacked on the first semiconductor chip and including a second semiconductor substrate having a second active surface and a second inactive surface opposite to each other, and a front cover layer covering the second active surface, a plurality of signal pad structures penetrating the rear cover layer and the front cover layer to be electrically connected to the plurality of through electrodes, and a plurality of dummy pad structures apart from the plurality of signal pad structures in a horizontal direction, and penetrating the rear cover layer and the front cover layer.

A method for sequencing a hybrid bonding process by double linking a source of dies and a target. The method may include selecting a source of dies for bonding, selecting a target on which the dies will be bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence that includes a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber allocations and process timing for the source and the target based on the integrated bonding product sequence, and bonding a die from the source to the target using the integrated bonding product sequence.

A method for sequencing a hybrid bonding process by double linking a source of dies and a target. The method may include selecting a source of dies for bonding, selecting a target on which the dies will be bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence that includes a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber allocations and process timing for the source and the target based on the integrated bonding product sequence, and bonding a die from the source to the target using the integrated bonding product sequence.

The present discloses includes a memory device including a first vertical plug and a second vertical plug that are arranged to be adjacent to each other, a first select line contacting the first vertical plug, a second select line over a same layer as the first select line and contacting the second vertical plug, and an isolation pattern overlapping with a portion of the first vertical plug and a portion of the second vertical plug and separating the first select line from the second select line.

A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.