H10W42/00

SEMICONDUCTOR DEVICE
20260101517 · 2026-04-09 · ·

A semiconductor device according to an embodiment of the present disclosure includes a guard area, a chip area surrounded by the guard area, and a circuit structure including bonding pads coupled in series in the chip area. A semiconductor device according to an embodiment of the present disclosure includes a chip area, chip guards surrounding the chip area and spaced apart from each other, and a circuit structure including bonding pads coupled in series between the chip guards.

SEMICONDUCTOR DEVICE

A semiconductor device may include a substrate having a chip region and a scribe lane region, the chip region including a plurality of chips arranged in a first direction and in a second direction, the second direction crossing the first direction, the scribe lane region surrounding the chip region, a peripheral circuit structure on the substrate, the peripheral circuit structure including a transistor with a gate and an active region, a cell structure on the peripheral circuit structure, a protective layer on at least a portion of the cell structure, and a discharge structure penetrating through the cell structure in a third direction, the third direction crossing each of the first direction and the second direction, the discharge structure electrically connected to the substrate. An upper surface of the discharge structure is exposed to an outside of the cell structure.

MULTI-LAYER SEMICONDUCTOR PACKAGE WITH STACKED PASSIVE COMPONENTS
20260101753 · 2026-04-09 ·

A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

HEAT DISSIPATION THROUGH REDISTRIBUTION STRUCTURE

A semiconductor package structure according to the present disclosure includes a substrate, an interposer bonded to the substrate by way of a plurality of first type solder features, and an integrated circuit (IC) die bonded to the interposer by way of a plurality of second type solder features. The interposer includes a redistribution structure and a seal ring structure extending around the redistribution structure. At least one of the plurality of second type solder features is electrically coupled to the seal ring structure.

Chip packaging apparatus and preparation method thereof

A chip packaging apparatus and a preparation method thereof are provided, to modulate warpage of a chip, thereby resolving a problem of mismatch between a warpage degree of the chip and a warpage degree of a substrate. The chip packaging apparatus includes a chip, a substrate, and a warpage modulation structure, where a surface that is of the chip and that faces the substrate is electrically connected to the substrate, the warpage modulation structure is disposed on a surface that is of the chip and that is opposite to the substrate, and a coefficient of thermal expansion of the warpage modulation structure is greater than a coefficient of thermal expansion of the chip.

Three dimensional semiconductor memory including pillars having joint portions between columnar sections
RE050869 · 2026-04-14 · ·

According to one embodiment, a semiconductor memory includes a plurality of conductors stacked with insulators being interposed therebetween and a pillar through the plurality of conductors. The pillar includes a first columnar section, a second columnar section, and a joint portion between the first columnar section and the second columnar section. The pillar comprises portions that cross the respective conductors and that each function as part of a transistor. The plurality of conductors include a first conductor. The first conductor is closest to the joint portion among the plurality of conductors through the second columnar section, and includes a bending portion formed along the joint portion.

Integrated circuit packages and methods

An integrated circuit package with a perforated stiffener ring and the method of forming the same are provided. The integrated circuit package may comprise an integrated circuit package component having an integrated circuit die on a substrate, an underfill between the integrated circuit package component and the substrate, and a stiffener ring attached to the substrate. The stiffener ring may encircle the integrated circuit package component and the underfill in a top-down view. The stiffener ring may comprise a perforated region, wherein the perforated region may comprise an array of openings extending from a top surface of the stiffener ring to a bottom surface of the stiffener ring.

Semiconductor package

A semiconductor package includes a package substrate including a first chip mounting area, a second chip mounting area, and a third chip mounting area spaced apart from one another in a first direction, semiconductor chips mounted on the first to third chip mounting areas, a first stiffener mounted on the package substrate to separate the first chip mounting area from the second chip mounting area, and a second stiffener mounted on the package substrate to separate the second chip mounting area from the third chip mounting area.

Probe card configured to connect to a probe pad located in saw street of a semiconductor wafer

A probe card for testing or trimming or programming a semiconductor wafer including a first die including a first integrated circuit having a trimmable or programmable component. The probe card including at least one probe arranged to make electrical contact with at least one probe pad arranged on the wafer. The at least one probe pad being electrically connected to the trimmable or programmable component and being arranged in a saw street of the wafer.

Package structures with collapse control features

Microelectronic die package structures formed according to some embodiments may include a substrate comprising one or more conductive interconnect structures on a surface of the substrate. One or more support features are on one or more peripheral regions of the surface of the substrate. A first side of a die is coupled to the one or more conductive interconnect structures and is over the one or more support features. A die backside layer is on the second side of the die.