Methods, devices, and systems for driving optical modulators. An example integrated circuit includes a driver including: a first circuit having a first switch coupled between a first input and a first output and a second circuit having a second switch coupled between a second input and a second output. Each of the first and second switches is configured to receive a control signal adjustable to control a corresponding signal path with a corresponding input electronic signal. The first and second circuits are configured to control a rising edge and a falling edge of an output electronic signal at an output of the driver that is based on a first output electronic signal at the first output and a second output electronic signal at the second output. The output of the driver is electrically coupled to the optical modulator to provide the output electronic signal to modulate an optical signal.

A semiconductor guide pin is disclosed. Specific implementations may include a heatsink, one or more substrates coupled together, one or more pressfit pins coupled to the one or more substrates, and two or more guide pins coupled to the one or more substrates, where the two or more guide pins may have a height greater than the one or more pressfit pins.

Methods, devices, and systems for driving optical modulators. An example integrated circuit includes a driver including a first circuit having a first switch coupled between a first input and a first output and a second circuit having a second switch coupled between a second input and a second output. Each of the first and second switches is configured to receive a control signal adjustable to control a corresponding signal path with a corresponding input electronic signal. The first and second circuits are configured to control a rising edge and a falling edge of an output electronic signal at an output of the driver that is based on a first output electronic signal at the first output and a second output electronic signal at the second output. The output of the driver is electrically coupled to the optical modulator to provide the output electronic signal to modulate an optical signal.

A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.

A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.

A semiconductor device includes a semiconductor substrate including a main chip region, a guard ring surrounding the main chip region, a moisture-proof ring surrounding the guard ring, an electrode structure in contact with the semiconductor substrate in the main chip region, and at least one metal pattern structure extending from the electrode structure to the moisture-proof ring. The at least one metal pattern structure is a connection line that grounds the moisture-proof ring.

A flexible electronic structure for bonding with an external circuit. The flexible electronic structure comprising a flexible body having a first surface, the flexible body comprising at least one electronic component, at least one contact element configured to bond with the external circuit, the at least one contact element operatively coupled with the at least one electronic component and provided at the first surface of the flexible body, and arranged to operably interface with the external circuit after bonding, and at least one support element provided at the first surface of the flexible body, each support element including a contact area arranged to contact a first surface of an external structure comprising the external circuit or a corresponding surface element disposed on the first surface of the external structure, wherein the contact area of each of the at least one support element does not overlie one or more predetermined types of electronic component among the at least one electronic component or one or more predetermined types of element of the at least one electronic component.

A semiconductor structure includes a substrate, a device, a conductor, a backside interconnect, and a thermoelectric generator. The substrate has a front surface and a rear surface opposite to the front surface. The device is disposed on the front surface of the substrate. The conductor is disposed at or near the front surface of the substrate and electrically coupled to the device. The backside interconnect is disposed on the rear surface of the substrate and electrically coupled to the device. The thermoelectric generator is disposed in the substrate and electrically coupled to the device, and includes a first-type through via and a second-type through via. The first-type through via penetrates from the rear surface of the substrate to the conductor, and is connected to a first conductive feature of the backside interconnect and the conductor. The second-type through via penetrates from the rear surface of the substrate to the conductor, and is connected to a second conductive feature of the backside interconnect and the conductor. The second-type through via is different from the first-type through via.

A circuit device includes a substrate having an active region and an inactive region adjacent a periphery of the active region, lower channel structures respectively comprising one or more lower channel patterns stacked on the substrate in the active region and in the inactive region, isolation patterns on the lower channel structures opposite the substrate, and upper channel structures respectively comprising one or more upper channel patterns stacked on the isolation patterns opposite the lower channel structures. The one or more lower channel patterns in the inactive region are free of the one or more upper channel patterns thereon.

A semiconductor die includes a semiconductor substrate and a dielectric layer extending on the semiconductor substrate. A high-voltage module extends on the semiconductor substrate. A metal guard ring extends into the dielectric layer and completely surrounds the high-voltage module. The die further includes at least one electronic device extending externally to the guard ring. A metal capping layer includes: a first portion extending over the high-voltage module and a second portion extending over the metal guard ring and in electrical contact with the metal guard ring. A bonding wire is electrically coupled to the first portion and extends over the dielectric layer at the electronic device. A metal screen extends above the guard ring, interposed between the bonding wire and the electronic device, in physical and electrical continuity with the second portion of the metal capping layer.