A semiconductor device is provided. The semiconductor device may include a substrate, a circuit component disposed on the substrate, an oxide layer disposed on the circuit component, a top metal layer disposed on the oxide layer, a non-planarized passivation layer disposed on the top metal layer, and a polyimide layer disposed on the non-planarized passivation layer. The top metal layer may include a first default feature and a second default feature, and the non-planarized passivation layer may include one or more trenches between the first default feature and the second default feature.

An apparatus, system, and method for a die seal layout design to improve adhesion of a polyimide layer to a passivation layer in semiconductor packaging is disclosed. The apparatus may include an outer seal ring on a semiconductor die. The apparatus may also include an inner seal ring on a portion of the semiconductor die. The apparatus may further include a trench between the outer seal ring and the inner seal ring. The apparatus may include a passivation layer covering the semiconductor die including the outer seal ring and the inner seal ring. The apparatus may additionally include a polyimide layer covering a portion of the passivation layer over the inner seal ring and a portion of the trench.

A method of manufacturing a package structure includes the following processes. An encapsulant is formed to laterally encapsulate a die. A plurality of first connectors are formed over the encapsulant. A warpage control material is formed over the die, wherein the first connectors are exposed by the warpage control material. A protection material is formed over the encapsulant between the first connectors. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

A chip packaging structure and a method for manufacturing are disclosed, including a semiconductor chip, a device layer, and a warpage compensation layer, which is bonded to the device layer. The warpage compensation layer has a thermal expansion coefficient matching that of the semiconductor chip, the mismatch in coefficients of thermal expansion between the substrate and the semiconductor chip can be compensated, thereby reducing or eliminating warpage. The thermal expansion coefficient of the warpage compensation layer is also close to that of the semiconductor chip, so they form a structure that has an in-between thermal expansion coefficient, which creates synchronous tensions or stress on top and bottom surfaces of the substrate to prevent it from bending toward one side.

A semiconductor device includes a circuit substrate, a semiconductor package, connective terminals and supports. The circuit substrate has a first side and a second side opposite to the first side. The semiconductor package is connected to the first side of the circuit substrate. The connective terminals are located on the second side of the circuit substrate and are electrically connected to the semiconductor package via the circuit substrate. The supports are located on the second side of the circuit substrate beside the connective terminals. A material of the supports has a melting temperature higher than a melting temperature of the connective terminals.

Semiconductor systems having anti-warpage frames (and associated systems, devices, and methods) are described herein. In one embodiment, a semiconductor system includes (a) a printed circuit board (PCB) having a first side and a second side opposite the first side, and (b) at least one memory device attached to the PCB at the first side of the PCB. The semiconductor system further includes a frame structure attached to the PCB at the first side of the PCB and proximate the at least one memory device. The frame structure can be configured to resist warpage of the PCB, for example, when the semiconductor system is heated to attach the at least one memory device to the PCB.

A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes forming a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, with a first center of conductive pad being offsetting from a second center of the conductive bump. The second via is further offset from the second center of the conductive bump.

In one example, an electronic device comprises a substrate comprising a conductive structure and an inner side and an outer side, a first electronic component over the inner side of the substrate and coupled with the conductive structure, a lid over the substrate and the first electronic component and comprising a first hole in the lid, and a thermal interface material between the first electronic component and the lid. The thermal interface material is in the first hole. Other examples and related methods are also disclosed herein.

A package structure includes a die, an encapsulant, a warpage control material and a protection material. The encapsulant laterally encapsulates the die. The warpage control material is disposed over the die. The protection material is disposed on a first sidewall of the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.