A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

An etching processing system includes a memory, and a processor coupled to the memory and configured to predict etching quality of a substrate by inputting image data of the substrate into a trained model trained by using training data in which image data of substrates captured by an imaging device arranged on a transfer path of the substrates and information for predicting etching quality of the substrates are associated with each other.

Disclosed are a manufacturing method for an optical device, and the optical device. The manufacturing method includes: providing a transferring member and an optical device to be transferred, wherein the transferring member includes a target transferring layer having a regular crystal orientation structure; forming a light-transmissive dielectric layer on a surface of the optical device to be transferred; coupling the transferring member to the optical device to be transferred in such a way of bonding the target transferring layer of the transferring member to the light-transmissive dielectric layer of the optical device to be transferred; and retaining at least part of the target transferring layer of the transferring member to form the optical device. Therefore, the surface of the optical device manufactured in the foregoing specific manufacturing method can form an optical layer structure having the regular crystal orientation structure.

A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270 C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25 C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

A method of processing a substrate includes providing a substrate including a pattern of lines extending in a first direction, and reducing stitching defects by removing material from the pattern of lines using a gas cluster beam. The pattern of lines includes a first subset of lines stitched to a second subset of lines in a stitching region that includes the stitching defects. The gas cluster beam includes an azimuthal component substantially parallel to the first direction. The stitching defects may be further reduced using an additional gas cluster beam in the opposite and substantially parallel to the first direction. The method may further include exposing a first region and a second region of a photosensitive layer of the substrate to different structured actinic radiation, and forming the pattern of lines on the substrate by developing the first region and the second region.

The present invention provides a measurement apparatus that measures a position of an object, comprising: a detector configured to irradiate a measurement target point of the object with light having a plurality of wavelengths, and detect a position of the measurement target point based on the light reflected by the measurement target point; and a processor configured to determine the position of the object based on a detection result of the detector, wherein the detection result includes an error represented by a waveform in which an amplitude cyclically changes in accordance with a distance between the detector and the object, and wherein the processor is configured to cause the detector to detect the position of the measurement target point at the distance at which the amplitude in the waveform of the error falls within an allowable range.

A semiconductor structure is provided. The semiconductor structure includes a lead frame and a sub-substrate disposed on the lead frame, wherein the thickness of the sub-substrate is between 0 and 0.5 m. The semiconductor structure also includes an epitaxial layer disposed on the sub-substrate. The epitaxial layer includes a buffer layer, a channel layer and a barrier layer. The buffer layer is disposed between the sub-substrate and the channel layer. The channel layer is disposed between the buffer layer and the barrier layer. The semiconductor structure further includes a device layer disposed on the barrier layer and an interconnector structure electrically connected to the epitaxial layer and/or the device layer by a through hole.

In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.

In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.

Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.