Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference Vref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference Vptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

Dynamic temperature range management techniques are described. A method comprises detecting a temperature of a semiconductor die meets a first threshold value of a dynamic temperature range for the semiconductor die, generating a first control directive for a liquid cooling system to start delivery of a cooling fluid to a liquid cooling component of the semiconductor die to reduce the temperature of the semiconductor die, detecting the temperature of the semiconductor die meets a second threshold value of the dynamic temperature range for the semiconductor die, the second threshold value lower than the first threshold value of the dynamic temperature range, and generating a second control directive to stop delivery of the cooling fluid to the liquid cooling component of the semiconductor die. Other embodiments are described and claimed.

A semiconductor device of an embodiment includes a main body which has a substrate and a chip mounted on a device surface facing one side in a first direction among outer surfaces of the substrate. The semiconductor device includes a housing which accommodates the main body. The semiconductor device includes a heat transfer pin. The housing has a lid member that faces the device surface. The heat transfer pin is held by the lid member and extends from the lid member toward the chip.

The present disclosure relates to a semiconductor device. A semiconductor device according to one embodiment of the present disclosure includes a lower metal layer, a substrate disposed on the lower metal layer, at least one transistor disposed on the substrate, an insulating layer disposed on the substrate and configured to cover the at least one transistor, an upper metal layer disposed on the insulating layer, a first via which includes a material having thermal conductivity, and a second via which includes a material having thermal conductivity, wherein a source electrode of the at least one transistor is connected to the lower metal layer through the first via and is connected to the upper metal layer through the second via.

A semiconductor device package is provided. The semiconductor device package includes a stack structure comprising a plurality of electronic components vertically stacked relative to each other. Each of the plurality of electronic components is configured to provide electrical connectivity in a vertical direction. A first thermal element surrounds lateral surfaces of the stack structure and is thermally coupled to a lateral surface of at least one of the electronic components, thereby enhancing lateral heat dissipation efficiency of the stack structure.

An electronic system for evaluating temperature differences between different pairs of thermal diodes to evaluate the quality of a thermal interface material layer used for cooling the electronic system. Formation of a thermal diode array on a semiconductor die allows the measurement of temperature and temperature differences between a plurality of the thermal diode pairs arranged in an orthogonal configuration. The temperature differences between the thermal diode pairs can indicate the presence of irregular distribution of the thermal interface material. Such components with thermal interface material flaws can be rejected during manufacture to improve manufacturing quality.

The present disclosure relates to thermal control systems, photonic memory fabrics, and electro-absorption modulators (EAMs). For example, the thermal control systems efficiently move data in a memory fabric based on utilizing and controlling thermally controlling optical components. As another example, the EAMs are instances of optical modulators used to efficiently move data within digital circuits while maintaining thermally-stable optical modulation across a wide temperature range.

A semiconductor device includes a heat sink, a base material including an insulating layer and mounted on the heat sink on one side in a first direction, a first conductive layer bonded to the base material and located on a side opposite the heat sink with respect to the base material, a first semiconductor element bonded to the first conductive layer, a first power terminal electrically connected to the first conductive layer and the first semiconductor element, and a sealing resin covering the first conductive layer and the first semiconductor element. The first power terminal is exposed from the sealing resin. The first power terminal is surrounded by a peripheral edge of the sealing resin as viewed in the first direction.

Methods to fabricate a semiconductor device, the method including: forming a first level, the first level including a single crystal silicon layer, a plurality of transistors, and a plurality of first metal layers, where each transistor of the plurality of transistors includes a single crystal channel, and where the plurality of first metal layers include interconnections between the transistors of the plurality of transistors; thinning the single crystal silicon layer to a thickness of less than two microns; forming a second level, the second level including a plurality of second metal layers, where the second level is disposed underneath the first level; and forming a connection path between at least one of the transistors to at least one of the plurality of second metal layers, where the connective path includes at least one via disposed through at least the single crystal silicon layer.

Disclosed herein are devices, systems, and methods related to edge couplers for providing wireless channel interconnects between edges of chiplets, components, modules, devices, packages, SoCs, etc. Such edge couplers may be formed from a stack of multiple layers and a core arranged between layers of the stack. A driven via extends from at least one feed layer of the stack of multiple layers into the core, wherein the driven via is isolated from ground. A plurality of grounded through-hole vias are grounded, extend from at least one ground layer of the stack, and traverse through the core, wherein the plurality of grounded through-hole vias partially surround the driven via.