A method of manufacturing a semiconductor device according to an embodiment includes: forming a plurality of semiconductor elements in a device region of a first main surface of a semiconductor wafer; and forming a rim on the semiconductor wafer, the rim surrounding the plurality of semiconductor elements and having a rigidity in a Y-axis direction that is higher than a rigidity in an X-axis direction when a first warpage amount of the semiconductor wafer in the X-axis direction is smaller than a second warpage amount of the semiconductor wafer in the Y-axis direction.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

A laminated sheet includes: a first layer having a storage modulus of 1.0E+9 Pa or more and 1.0E+10 Pa or less in a tensile direction under a condition where a frequency of 1 Hz is applied in an environment of 50 C.; and a second layer laminated on the first layer and having a storage modulus of 1.0E+6 Pa or more and 1.0E+8 Pa or less in the tensile direction under the condition where the frequency of 1 Hz is applied in the environment of 50 C. A difference in a solubility parameter between the first layer and the second layer is 3.0 or less. The first layer and the second layer are laminated without an adhesive layer interposed therebetween.

A method includes providing a first substrate structure including a first semiconductor substrate having first and second surfaces opposite to each other, and a first semiconductor device layer on the first surface, providing a second substrate structure including a second semiconductor substrate having third and fourth surfaces opposite to each other, and a second semiconductor device layer on the third surface, removing a portion of the second semiconductor device layer on a first edge region of the second semiconductor substrate, electrically connecting the first and second semiconductor device layers by bonding the first and second substrate structures such that the first surface faces the third surface, forming a gap-filling film that fills a portion of a gap between the first substrate structure and the first edge region, removing a portion of the first edge region and reducing the thickness of the second semiconductor substrate using a laser trimming process.

The present invention relates to a cyber-physical system for optimizing a simulation model for chemical mechanical polishing based on actual measurement data of chemical mechanical polishing. The chemical mechanical polishing system includes a polishing apparatus (1) for polishing the workpiece (W) and an arithmetic system (47). The arithmetic system (47) includes a simulation model including at least a physical model configured to output an estimated polishing physical quantity including an estimated polishing rate of the workpiece (W). The arithmetic system (47) is configured to: input polishing conditions for the workpiece (W) into the simulation model; output the estimated polishing physical quantity of the workpiece (W) from the simulation model; and determine model parameters of the simulation model that bring the estimated polishing physical quantity closer to a measured polishing physical quantity of the workpiece (W).

A substrate processing apparatus includes a chuck configured to hold a substrate horizontally; a processing unit configured to press a processing tool against an outer periphery of the substrate held by the chuck to process the substrate; and a lower cup configured to collect a processing residue falling from the substrate over an entire circumference of the substrate. The lower cup is provided with a discharge opening through which the processing residue is discharged.

A cleaning agent composition for use in removal of an adhesive residue, the composition containing a quaternary ammonium salt and a solvent, wherein the solvent consists of an organic solvent, and the organic solvent includes an N,N,N,N-tetra(hydrocarbyl)urea.

A manufacturing method for dicing a wafer having multiple non-rectangular dies is provided. The manufacturing method comprises the following steps. First, arrange the dies on the wafer such that the edges of each die are aligned in a straight line and partitions are formed between the adjacent dies. Next, multiple markers are disposed individually in each partition. Then, after initially imaging and locating each marker, a straight-line cut is performed along the aligned edges of the dies. After rotating the wafer to a new angle and imaging to locate each marker, a straight-line cut along another set of aligned and uncut edges of the dies are performed. Finally, repeat the previous step until all edges of each die have been straight-line cut.

A method for forming a metal oxide layer with high carrier mobility. The method for forming a metal oxide layer includes a first step of forming a first amorphous film, a second step of forming a first crystallized film from the first amorphous film by first heat treatment, a third step of removing a part of the first crystallized film by wet etching to form a seed crystal layer, a fourth step of forming a second amorphous film over the seed crystal layer, and a fifth step of forming a second crystallized film from the second amorphous film by second heat treatment. Each of the first amorphous film, the first crystallized film, the seed crystal layer, the second amorphous film, and the second crystallized film includes indium and oxygen. The first crystallized film includes crystal grains having random orientations. The seed crystal layer has a first crystal orientation with respect to a formation surface. The second crystallized film is formed of crystal grains having the first crystal orientation.