A method for controlling a concentration of donors in an Al-alloyed gallium oxide crystal structure includes implanting a Group IV element as a donor impurity into the crystal structure with an ion implantation process and annealing the implanted crystal structure to activate the Group IV element to form an electrically conductive region. The method may further include depositing one or more electrically conductive materials on at least a portion of the implanted crystal structure to form an ohmic contact. Examples of semiconductor devices are also disclosed and include a layer of an Al-alloyed gallium oxide crystal structure, at least one region including the crystal structure implanted with a Group IV element as a donor impurity with an ion implantation process and annealed to activate the Group IV element, an ohmic contact including one or more electrically conductive materials deposited on the at least one region.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more. ##STR00001##

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.

A semiconductor die assembly is introduced in this disclosure. The semiconductor die assembly includes one or more semiconductor dies, a dielectric layer disposed under a bottom surface of the one or more semiconductor dies, and metal fragments or a metal layer disposed under the dielectric layer, wherein metal-OH bonds or metal-OSiOH bonds are disposed on a bottom surface of the dielectric layer. Alternatively, the semiconductor die assembly includes one or more semiconductor dies, a metal layer disposed under a bottom surface of the one or more semiconductor dies, and a metal oxidation layer disposed under the dielectric layer, wherein the metal oxidation layer comprises metal-OH bonds or metal-OSiOH bonds.

A substrate processing apparatus includes a substrate holder for holding a substrate; a driving mechanism for driving a tool for processing the substrate held by the substrate holder; a housing that accommodates the substrate holder and the tool; and a sprayer for spraying a liquid to an inside of the housing in a form of mist.

A manufacturing method for a semiconductor device includes a preparation step of preparing a wafer that has a first surface on one side and a second surface on the other side, a first supporting step of supporting the wafer from the first surface side by a first member of a plate shape, a thinning step of thinning the wafer in a state where the wafer is supported by the first member, a second supporting step of supporting the wafer from a peripheral edge portion side of the second surface by a second member of a plate shape that exposes an inner portion of the second surface after the thinning step, and a removing step of removing the first member from the first surface side in a state where the wafer is supported by the second member.

A method for manufacturing a semiconductor structure includes the following operations. A base and a dielectric layer arranged on the base are provided. A first conductive pillar, a second conductive pillar and a third conductive pillar arranged in the dielectric layer are formed. A mask layer is formed. A portion of a thickness of the third conductive pillar is etched by using the third mask layer as a mask to form a third lower conductive pillar and a third upper conductive pillar stacked on one another, in which the third upper conductive pillar, the third lower conductive pillar and the dielectric layer are configured to form at least one groove. A cover layer filling the at least one groove is formed, in which the cover layer exposes the top surface of the third upper conductive pillar.

A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding layer, and a modified layer forming step of forming a plurality of modified layers in a ring shape by irradiating the coordinates generated in the coordinate generating step with the laser beams of a wavelength transmissible through the first wafer.

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

A method of manufacturing a laminated wafer with a processed outer circumference includes acquiring a value of joint misalignment between a first wafer and a second wafer of the laminated wafer by measuring the positions of outer circumferences of the first and second wafers, holding the second wafer of the laminated wafer on a holding surface of a holding mechanism, acquiring the position of the first wafer with respect to the holding mechanism while the laminated wafer is being held by the holding mechanism, acquiring the position of the second wafer with respect to the holding mechanism on the basis of the acquired value of joint misalignment and the acquired position of the first wafer, and processing the outer circumference of the first wafer on the basis of the acquired position of the second wafer as a reference.