A slurry containing: abrasive grains; a compound X; and water, in which the abrasive grains contain cerium oxide, and a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa.sup.1/2 or more. A polishing method including polishing a surface to be polished by using this slurry.

Provided is a method capable of efficiently polishing the front and back sides of a carrier plate unused after manufacture, which is used in a double-sided polishing process for semiconductor wafers. The method comprises: sandwiching a carrier plate unused after manufacture and to be polished between an upper surface plate and a lower surface plate in the double-sided polishing apparatus, and supplying a polishing liquid while relatively rotating the carrier plate to be polished, the upper surface plate, and the lower surface plate to polish both sides of the carrier plate to be polished, wherein a polishing pad including, on its surface, an abrasive grain-containing layer in which abrasive grains of 2 m or more in grain size are embedded is used as a polishing pad in a double-sided polishing apparatus.

Provided is a method capable of efficiently polishing the front and back sides of a carrier plate unused after manufacture, which is used in a double-sided polishing process for semiconductor wafers. The method comprises: sandwiching a carrier plate unused after manufacture and to be polished between an upper surface plate and a lower surface plate in the double-sided polishing apparatus, and supplying a polishing liquid while relatively rotating the carrier plate to be polished, the upper surface plate, and the lower surface plate to polish both sides of the carrier plate to be polished, wherein a polishing pad including, on its surface, an abrasive grain-containing layer in which abrasive grains of 2 m or more in grain size are embedded is used as a polishing pad in a double-sided polishing apparatus.

A chip scale semiconductor package comprises a silicon layer, a back side metal layer, and a plurality of front side pads. Each of the plurality of front side pads comprises a respective copper member and a respective solder member. A method comprises the steps of: providing a wafer; grinding the back side of the wafer forming a peripheral ring; applying a metallization process to a grinded surface; removing the peripheral ring; forming a front side seed layer; forming a front side photoresist layer; applying a photolithography process; applying a front side copper plating process; applying a front side solder plating process; stripping the front side photoresist layer; etching the front side seed layer; and applying a singulation process.

A substrate processing apparatus for processing a combined substrate in which a first substrate, an interface layer including at least a laser absorption layer, and a second substrate are stacked is provided. An outer peripheral region including a non-bonding region of the first substrate and the second substrate, and an inner peripheral region in a bonding region are set in the combined substrate. A controller executes: a control of causing separation at an interface between the first substrate and the laser absorption layer or at an interface between the interface layer and the laser absorption layer by radiating laser light to the combined substrate while rotating the combined substrate and moving the laser light in the radial direction; and a control of radiating the laser light while moving the laser light from an inner side toward an outer side in the radial direction.

Bonded die structures and methods of fabrication thereof that provide reduced defects and higher reliability. A laser grooving process may be used to precut bonded device structures prior to a final dicing process. The laser grooving process may form relatively deep grooves in the bonded device structure that may extend beyond the bonding interface between a first device structure and a second device structure. A final dicing process along the precut grooves may be used to separate individual bonded die structures. Because the dicing occurs along the deep precut grooves that extend through the bonding interface between the stacked device structures, the dicing blade may not cut through or come into contact with the bonding interface. This may result in in reduced mechanical stress, which may decrease the occurrence of delamination defects between the device structures and thereby provide improved reliability and increased yields.

The present disclosure has an object of providing a method of manufacturing a semiconductor device whose manufacturing processes can be simplified. The method of manufacturing the semiconductor device according to the present disclosure includes: a preparation process of preparing two crystalline substrates made of silicon carbide and having respective constant thicknesses; a laminating process of laminating the two crystalline substrates to form a laminated crystalline substrate; an epitaxial growth process of forming an epitaxial layer on a first main surface of the laminated crystalline substrate; an element forming process of forming an element on the epitaxial layer; and a grinding process of grinding, after the element forming process, the laminated crystalline substrate from a second main surface of the laminated crystalline substrate to grind an interface between the laminated two crystalline substrates, the second main surface facing the first main surface.

Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. In particular, a method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof is provided, the method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.

Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

The present application relates to a substrate processing method of suppressing cracking and chipping of a laminated substrate manufactured by bonding substrates, and more particularly to a technique of applying filler to a gap formed between edge portions of the substrates constituting the laminated substrate. The substrate processing method includes: applying a first filler to the gap between an edge portion of a first substrate and an edge portion of a second substrate; and applying a second filler to the gap between the edge portion of the first substrate and the edge portion of the second substrate after applying of the first filler. A viscosity of the first filler is lower than a viscosity of the second filler.