A semiconductor substrate is configured for dicing into separate die or individual semiconductor devices. The semiconductor substrate can comprise silicon, silicon carbide, or gallium nitride. A dicing grid bounds each semiconductor device on the semiconductor substrate. A die singulation process is configured to occur in the dicing grid. Material is coupled to the dicing grid. In one embodiment, the material can comprise carbon. A laser is configured to couple energy to the material coupled to the dicing grid. The energy from the laser heats the material. The heat from the material or the temperature differential between the material and the dicing creates a thermal shock that generates a vertical fracture in the semiconductor substrate that separates the semiconductor device from the remaining semiconductor substrate.

A bonding region is specified by having a horizontal line partially constituting crosshairs displayed on a monitor of a wire bonding apparatus superimposed on a first line segment of a first marker, and having a vertical line partially constituting the crosshairs superimposed on a first line segment of a second marker.

A bonding region is specified by having a horizontal line partially constituting crosshairs displayed on a monitor of a wire bonding apparatus superimposed on a first line segment of a first marker, and having a vertical line partially constituting the crosshairs superimposed on a first line segment of a second marker.

There is provided a semiconductor device 1, comprising: a housing comprising a housing electrode 4; and at least one semiconductor chip 20 arranged within the housing; wherein the housing electrode 4 comprises a deformable portion 15, and the deformable portion 15 is configured to deform when a pressure difference between an interior and an exterior of the housing exceeds a threshold differential pressure or a temperature at the deformable portion exceeds a threshold temperature, so as to transform the housing from a hermetically sealed housing to an open housing in fluid communication with the exterior.

A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels of only two grayscale levels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

According to the present disclosure, a semiconductor apparatus comprises a housing a semiconductor chip installed in the housing, and a first radio tag installed on the housing. The first radio tag is installed in a state where rewriting from outside is not limited.

A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.

A structure includes a combinational semiconductor die, an interposer, and solder bumps coupled between the combinational semiconductor die and the interposer. The combinational semiconductor die includes a first unit region and a second unit region over a semiconductor substrate. The first unit region abuts the second unit region. The first unit region includes a first device portion and a first dummy portion. The second unit region includes a second device portion and a second dummy portion The first dummy portion includes a first conductive feature and the second dummy portion includes a second conductive feature in physical contact with the first conductive feature.

The invention provides a semiconductor structure including alignment marks, which comprises a substrate defining a peripheral region, a first gate structure located in the peripheral region on the substrate, wherein the first gate structure has a left boundary and a right boundary, a dielectric layer covers the first gate structure in the peripheral region, a first left slot contact groove located in the dielectric layer on the left side of the first gate structure, a first right slot contact groove located in the dielectric layer on the right side of the first gate structure, and a first gate opening exposing a left boundary and a right boundary of the first gate structure, a boundary of the first left slot contact groove and a boundary of the first right slot contact groove.

A semiconductor structure includes a circuit region, a seal ring region and at least one alignment mark. The seal ring region surrounds the circuit region and includes a seal ring corner region. The seal ring is disposed in the seal ring region, and includes a corner seal ring portion in the seal ring corner region. The corner seal ring portion divides the seal ring corner region into a plurality of sub-regions, and the at least one alignment mark is disposed in at least one of the sub-regions of the seal ring corner region.