A method of capping a metal layer includes performing a conversion process to reduce a metal oxide layer formed on a top surface of the metal layer and form a metal sulfide layer on the top surface of the metal layer, exposing the top surface of the metal layer to an oxidizing environment, and performing a removal process to remove the metal sulfide layer.

A substrate processing apparatus includes: a brush processing section configured to perform brush processing on a surface of a substrate taken out from a container; a substrate reversal section configured to flip the substrate before the brush processing and after the brush processing; a substrate imaging section configured to perform pre-processing imaging on the surface before the brush processing, and perform post-processing imaging on the surface after the brush processing and before the substrate is returned to the container; and a controller, wherein the controller determines whether or not the substrate after the brush processing is a good product based on a result of the post-processing imaging, and changes, as necessary, a process condition of the brush processing for the substrate having been subjected to the pre-processing imaging or a substrate to be processed afterward based on at least one of the pre-processing imaging or the post-processing imaging.

A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned with use of a lower-surface brush. The substrate is lowered from an upper holding device and transferred to a suction holder of a lower holding device. The substrate held by the suction holder is cleaned with use of a processing liquid. A cup is provided to be liftable and lowerable between an upper cup position and a lower cup position. The cup is in the lower cup position when waiting. A period for the substrate lowering operation and a period for the cup lifting operation at least partially overlap with each other.

A wafer cleaning method includes steps as follows. A wafer including a surface to be washed is provided. A first nozzle and a second nozzle disposed above the surface to be washed are provided. The wafer is rotated. A first fluid and a second fluid are provided to spray onto the surface to be washed respectively through the first nozzle and the second nozzle. The first nozzle and the second nozzle are controlled to move a predetermined distance from a central region of the surface to be washed along a first direction away from the central region. The first nozzle and the second nozzle are controlled to move along a second direction opposite to the first direction to a peripheral region of the surface to be washed.

A substrate processing apparatus includes a first drying unit configured to perform a first drying process using a drying fluid on a substrate having a liquid film formed thereon, a first fluid supply unit configured to supply the drying fluid into the first drying unit, a second drying unit configured to perform a second drying process using the drying fluid on the substrate on which the first drying process is performed, a second fluid supply unit configured to supply the drying fluid into the second drying unit, a first door configured to control opening and closing of the first drying unit, and a second door configured to control opening and closing of the second drying unit, wherein the first door is opened when pressure in the first drying unit reaches a first transfer pressure, and the second door is opened when pressure in the second drying unit reaches a second transfer pressure.

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

In some examples, a device comprises a wafer chuck, a member having a surface facing the wafer chuck, a blade supported by the surface, a first vacuum nozzle extending through the member and having a first vacuum orifice facing a same direction as the surface, and a second vacuum nozzle extending through the member and having a second vacuum orifice facing the same direction as the surface. The first and second vacuum orifices are on opposing sides of the blade.