Embodiments described herein may be related to apparatuses, processes, and techniques related to multilevel dies, in particular to photonics integrated circuit dies with a thick portion and a thin portion, where the thick portion is placed within a cavity in a substrate and the thin portion serves as an overhang to physically couple with the substrate, to reduce a distance between electrical contacts on the thin portion of the die and electrical contacts on the substrate. Other embodiments may be described and/or claimed.

Methods, systems, and devices for radiation hardening for semiconductor systems are described. Shielding materials may be used to protect components of a semiconductor system from incident radiation. In some examples, the shielding materials may include a combination of film materials, such as organic polymer films, and radiation shielding materials, such as boron compounds. The shielding layers can be arranged in various configurations, including multilayer, single layer, or filler-embedded configurations, which may balance film flexibility and radiation protection. By strategically placing these shielding layers on components of a semiconductor system, the system may effectively attenuate radiation incidence on circuitry of the semiconductor system, thereby reducing the likelihood of radiation-induced errors and enhancing the overall reliability of the semiconductor system.

A semiconductor package includes a substrate, a bridge die, a first sub-package and a second sub-package, and a plurality of connectors. The bridge die is adhered on a first side of the substrate by an adhesive. The first sub-package and the second sub-package are disposed on the substrate and electrically coupled to the substrate and the bridge die, where the bridge die is disposed between the first sub-package and the substrate. The plurality of connectors are disposed on a second side of the substrate, the first side is opposite to the second side, where the plurality of connectors is electrically coupled to the substrate.

A semiconductor package comprises a semiconductor transistor die, an encapsulant embedding the semiconductor transistor die, and two fastening devices for fastening the semiconductor package to a heat sink, each one of the fastening devices comprising an upper portion which is partly embedded in the encapsulant, and a lower portion connected with the horizontal holding portion.

A semiconductor package includes a board substrate, an integrated circuit component and a ring structure. The integrated circuit component is bonded to the board substrate and includes at least one semiconductor die. The ring structure is disposed on the board substrate and encircles the integrated circuit component, wherein the ring structure includes a plurality of cavities around a boundary of the integrated circuit component.

Various aspects of the present disclosure generally relate to an integrated circuit device, and to heat management and/or electromagnetic interference (EMI) management associated with an integrated circuit device. A device includes a two-phase thermal management device, and a frame coupled to the two-phase thermal management device. The frame includes an opening, and the frame and the two-phase thermal management device define a cavity. The device also includes an EMI shield structure coupled to the two-phase thermal management device via an EMI shield gasket. At least a portion of the EMI shield structure is positioned within the cavity.

In certain aspects, a semiconductor device includes a first semiconductor layer, a first semiconductor structure formed on the first semiconductor layer including a main chip region, and seal ring discontinuous contact structures formed in a seal ring region enclosing the main chip region. Each seal ring discontinuous contact structure includes a seal ring body portion and a through silicon contact (TSC) portion penetrating through the first semiconductor layer and coupled to the seal ring body portion.

A method that includes bonding at least one of a redistribution layer interposer substrate onto a package substrate, bonding packaging components and memory components to an upper surface of the redistribution layer interposer substrate; and bonding a photonics chip to the upper surface of the redistribution layer interposer substrate.

Provided is a semiconductor device including a substrate, a semiconductor chip on the substrate, and a bonding layer between the substrate and the semiconductor chip, wherein the bonding layer includes a transition metal, a low-melting-point metal having a melting point lower than a melting point of the transition metal, a noble metal, and an alloy thereof, and a percentage of the noble metal in the bonding layer is greater in a central portion of the bonding layer than at peripheral portions of the bonding layer in a first direction of the bonding layer.

A stacked semiconductor device includes a cooling structure to increase the cooling efficiency of the stacked semiconductor device. The cooling structure includes various types of cooling components integrated into the stacked semiconductor device that are configured to remove and/or dissipate heat from dies of the stacked semiconductor device. In this way, the cooling structure reduces device failures and permits the stacked semiconductor device to operate at greater voltages, greater speeds, and/or other increased performance parameters by removing and/or dissipating heat from the stacked semiconductor device.