A method for manufacturing a singulated semiconductor product from a package is provided, and includes the steps of a) providing the bottom frame with the clip matrix with a semiconductor component and placing them in a mold cavity, b) closing the mold, c) moving retractable pins through openings in the mold, so that the tips of the pins come into contact with the tie bars or the clip tie-bars of the clip matrix, d) performing the molding operation using the encapsulating material, e) retracting the pins away from the package, f) opening the mold, g) removing the package from the mold, and h) singulating the package into a separate product by sawing along and trimming the microleads. With the above steps at least one encapsulated and singulated semiconductor product is formed, that has notches formed on the sides thereof, that expose either tie bars or clip tie-bars.

A method for manufacturing a singulated semiconductor product from a package is provided, and includes the steps of a) providing the bottom frame with the clip matrix with a semiconductor component and placing them in a mold cavity, b) closing the mold, c) moving retractable pins through openings in the mold, so that the tips of the pins come into contact with the tie bars or the clip tie-bars of the clip matrix, d) performing the molding operation using the encapsulating material, e) retracting the pins away from the package, f) opening the mold, g) removing the package from the mold, and h) singulating the package into a separate product by sawing along and trimming the microleads. With the above steps at least one encapsulated and singulated semiconductor product is formed, that has notches formed on the sides thereof, that expose either tie bars or clip tie-bars.

An embodiment semiconductor device includes an interposer, a semiconductor die electrically connected to the interposer, an integrated passive device die electrically connected to the interposer, the integrated passive device die including two or more seal rings, and a first alignment mark formed on the integrated passive device die within a first area enclosed by a first one of the two or more seal rings. The integrated passive device die may further include two or more integrated passive devices located within respective areas enclosed by respective ones of the two or more seal rings. Each of the two or more integrated passive devices may include electrical connections that are formed as a plurality of micro-bumps, and the first alignment mark may be electrically isolated from the electrical connections, and the first alignment mark and the electrical connections may share a common material.

A die bonding method is disclosed, through coating bonding adhesive on front side of device wafer and bonding carrier wafer thereto, back-side connection structure can be formed on back side of device wafer to lead out an interconnect structure in device wafer to back side of device wafer, and dies thereon can be bonded at front sides to target wafer. Moreover, after device wafer is debonded from carrier wafer, the bonding adhesive is retained on front side of device wafer to provide protection to front side of device wafer during subsequent dicing of device wafer, and to avoid particles or etching by-products produced during dicing process from adhering to front side of device wafer. Such etching by-products are subsequently removed along with the bonding adhesive, ensuring cleanness of front sides of individual dies resulting from dicing process and improved quality of bonding of dies at front sides to target wafer.

According to an embodiment, semiconductor manufacturing equipment includes a processing chamber for processing a substrate on which a photoresist film is formed, a stage configured to support the substrate, an annular edge ring configured to enclose the substrate, an annular guard ring configured to cover a circumferential edge of the substrate from above, and a conveyor configured to convey at least the guard ring, in which the guard ring is configured to have an inner circumferential end located between an outer circumferential end of the substrate supported on the stage and an outer circumferential end of the photoresist film.