A vehicle control device includes a power converter that converts supplied direct current power and supplies the converted direct current power to a load device. A first voltage detector detects a first voltage that is a voltage of the power supply line. A second voltage detector detects a second voltage that is a voltage of the power converter on a side where a power supply source is provided. When a first contactor is closed and brought into a state allowing current to flow through the first contactor, if a decreasing amount of the first voltage from a first time ago to a present time is greater than or equal to a first threshold and a decreasing amount of the second voltage from a second time ago to the present time is greater than or equal to a second threshold, a contactor controller opens the first contactor.

A system for improved intermodal freight transportation is described herein. Improved carriages and support trusses are provided that beneficially move the load-bearing structure to interconnected support trusses forming a top-end spine of the train with freight containers equipped with wheels hanging underneath. Upon entering a terminal, the floor adjacent to the rails may be configured to gradually rise until the container's wheels are supporting the container's weight. When properly aligned with a container exchange station, the container's connections to the train may be configured to release the container from the train, and the container's wheels may be configured to pivot, allowing the container to be rolled to the side of the train and replaced by another. This may allow the container to be replaced without having to lift the container or disconnect any of the rolling stock components.

A system for improved intermodal freight transportation is described herein. Improved carriages and support trusses are provided that beneficially move the load-bearing structure to interconnected support trusses forming a top-end spine of the train with freight containers equipped with wheels hanging underneath. Upon entering a terminal, the floor adjacent to the rails may be configured to gradually rise until the container's wheels are supporting the container's weight. When properly aligned with a container exchange station, the container's connections to the train may be configured to release the container from the train, and the container's wheels may be configured to pivot, allowing the container to be rolled to the side of the train and replaced by another. This may allow the container to be replaced without having to lift the container or disconnect any of the rolling stock components.

A car control device includes a driving force calculating unit that calculates driving force necessary for a train to travel; an operating number calculating unit that determines the number of M cars to be operated on the basis of the driving force; and a driving force command calculating unit that calculates driving force commands to be given to the M cars that operate depending on the number of M cars to be operated, wherein the driving force command calculating unit continuously changes the driving force commands when the number of M cars to be operated changes.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10.sup.21 cm.sup.−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10.sup.18 cm.sup.−3 and a carbon concentration at the first position is equal to or less than 1×10.sup.18 cm.sup.−3, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×10.sup.18 cm.sup.−3.

A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face opposite to the first face, and including a p-type silicon carbide region in contact with the first face, a percentage of a first silicon atom among a plurality of silicon atoms present in a first layer as an uppermost layer being equal to or more than 90% and a site position of the first silicon atom being different from a site position of a silicon atom in a third layer from the first face and the same as a site position of a silicon atom in a fifth layer from the first face; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer including nitrogen.

A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face opposite to the first face, and including a p-type silicon carbide region in contact with the first face, a percentage of a first silicon atom among a plurality of silicon atoms present in a first layer as an uppermost layer being equal to or more than 90% and a site position of the first silicon atom being different from a site position of a silicon atom in a third layer from the first face and the same as a site position of a silicon atom in a fifth layer from the first face; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer including nitrogen.

This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×10.sup.21 cm.sup.−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z.sub.1/2 in a portion is not more than 1×10.sup.11 cm.sup.−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×10.sup.18 cm.sup.−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×10.sup.18 cm.sup.−3.

This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×10.sup.21 cm.sup.−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z.sub.1/2 in a portion is not more than 1×10.sup.11 cm.sup.−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×10.sup.18 cm.sup.−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×10.sup.18 cm.sup.−3.

An underfloor device includes first and second closed portions. The outer surfaces of the first and second closed portions form a portion of a housing. A portion of the outer surfaces of the first and second closed portions are in contact with an open portion that is a space extending into a vertical direction from an opening formed on the vertically top face of the housing. The portion of the outer surface of the first closed portion in contact with the open portion and the portion of the outer portion of the second closed portion in contact with the open portion are provided with a first connection port and a second connection port, respectively. A first outfitting cable and a second outfitting cable are to be passed through the opening and the open portion, and respectively through the first connection port and the second connection port.