A transmitting device, preferably containing at least two laser diodes and a scanning mirror, which is deflectable about its center (MP) and is arranged in a housing with a transparent cover element. The cover element is formed, at least in a coupling-out region, by a section of a monocentric hemispherical shell (HK) with a center of curvature (K) and is arranged to cover the scanning mirror in such a way that the center of curvature (K) of the hemispherical shell (HK) and the center (MP) of the scanning mirror coincide, and is formed in a coupling-in region by an optical block, comprising a toroidal entrance surface, in the special form of a cylindrical surface, at least one toroidal exit surface and at least two first mirror surfaces arranged between them, for deflecting and pre-collimating the laser beams.

A method for manufacturing a micromechanical sensor, in particular a pressure difference sensor, including creating a functional layer on a substrate; creating at least one rear side trench area proceeding from a rear side of a substrate, for exposing the functional layer for a sensor diaphragm; creating at least one front side trench area for forming at least one supporting structure, in particular an energy storage structure, preferably in the form of a spring structure, in the substrate as a mounting for the sensor diaphragm; and at least partially filling at least a front side trench area with a gel.

Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

A piezoelectric micromachined ultrasound transducer (PMUT) array may comprise PMUT devices with respective piezoelectric layers and electrode layers. Parasitic capacitance can be reduced when an electrode layer is not shared across PMUT devices but may expose the devices to electromagnetic interference (EMI). A conductive layer located within the structural layer or on a shared plane with the electrode layers may reduce EMI affecting the PMUT array operation.

The present invention relates to a method and an apparatus for detecting a failure of a sensor device during operation of the sensor device. A test signal is generated in a first frequency band that is above a signal frequency band of the sensor device and fed into a sensor element of the sensor device. A set of samples is obtained, and a magnitude value is derived from said at least two consecutive samples at the first frequency band. The magnitude value is compared to a magnitude threshold value that defines a minimum for the magnitude value and if the magnitude value is below the magnitude threshold value, it is determined that an error has occurred in the sensor device.

An example includes: a system board having a surface; bond fingers on a surface of the system board; a semiconductor device on the surface of the system board, the semiconductor device comprising a semiconductor die having a surface, the semiconductor die comprising bond pads on the surface; conductors coupling the bond pads to the bond fingers; and a datum structure on the surface of the system board, the datum structure having openings that form wells with sides around the bond fingers.

Microelectromechanical systems (MEMS) switches are disclosed. The MEMS switch may have an actuation voltage greater than the expected voltage of a signal being passed by the MEMS switch in normal operation. The MEMS switches may include a distributed hinge structure in some embodiments. Radial contact pads are included in some embodiments, with or separate from the distributed hinge.

A semiconductor device may include a first substrate, a first electrical component, a lid, a second substrate, and a second electrical component. The first substrate may include an upper surface, a lower surface, and an upper cavity in the upper surface. The first electrical component may reside in the upper cavity of the first substrate. The lid may cover the upper cavity and may include a port that permits fluid to flow between an environment external to the semiconductor device and the upper cavity. The second substrate may include the second electrical component mounted to an upper surface of the second substrate. The lower surface of the first substrate and the upper surface of the second substrate may fluidically seal the second electrical component from the upper cavity.