Disclosed in the present disclosure is a manufacturing method for a 3D microelectrode. The manufacturing method includes the following steps: (1) manufacturing a 3D model of a 3D microelectrode; (2) pouring a flexible material into the 3D model, and performing demolding so as to form a flexible mold having a cavity, wherein the cavity of the flexible mold can be fitted to the 3D model; (3) performing silanization treatment on the flexible mold, then pouring a flexible material into the surface of the flexible mold having the cavity, and performing demolding so as to form a flexible 3D microelectrode substrate; and (4) manufacturing a conductive layer on the flexible 3D microelectrode substrate so as to form the 3D microelectrode. In the present disclosure, a 3D microelectrode having an ultrahigh microcolumn height can be manufactured by using a 3D printing technology and a two-time mold-reversing method.

A system for fabricating a crystalline film is provided comprising a sputtering chamber that receives placement of a substrate, receives placement of a Tungsten target, and receives configuration of a separation distance between the substrate and the Tungsten target. The system also receives adjustment of chamber pressure, receives selection of a gas mixture ratio, and receives selection of a sputtering power profile. The chamber yields crystalline cluster-free amorphous Tungsten nitride alloy film. The chamber receives placement of the Tungsten target on a sputtering tool. The separation distance is configured to minimize adatom mobility of film produced. The chamber pressure is adjusted within a range of about 30 mTorr to about 5 mTorr, inclusive. The gas mixture ratio is a sputtering gas mixture ratio of Argon to Nitrogen. The sputtering power profile is for the sputtering tool. The power profile is 300 W of alternating current.

A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.

A microfluidic device contains a first layer having a plurality of channels, a second layer having a plurality of droplet makers, and a third layer having a plurality of through-holes connecting the plurality of channels to the plurality of droplet makers. The channels have a height of at least 4 times greater than the height of the droplet makers. The microfluidic device has at least 500 droplet makers in an area less than 10 cm.sup.2. The channels are formed by direct laser-micromachining and the droplet makers are formed by soft lithography molding.

A thermal regulation system includes an inertial measurement unit (IMU), one or more temperature adjusting devices in thermal communication with the IMU, and configured to adjust a temperature of the IMU from an initial temperature to a predetermined temperature, a filler provided in a space between the IMU and at least one temperature adjusting device of the one or more temperature adjusting devices, and a shared substrate configured to bear a weight of the IMU and the one or more temperature adjusting devices. The shared substrate includes a metallic board.

Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.

Mass transfer tools and methods for high density transfer of arrays of micro devices are described. In an embodiment, a mass transfer tool includes a plurality of articulating transfer head assemblies coupled with a main translation track, where each articulating transfer head assembly is translatable along the main translation track between a donor substrate stage and a receiving substrate stage.

A method for characterizing structures etched in a substrate, such as a wafer is disclosed. The method includes the following steps: illuminating the bottom of at least one structure with an illumination beam issued from a light source emitting light with a wavelength adapted to be transmitted through the substrate, acquiring, with an imaging device positioned on the bottom side of said substrate, at least one image of a bottom of the at least one structure through the substrate, and measuring at least one data, called lateral data, relating to a lateral dimension of the bottom of the at least one HAR structure from the at least one acquired image. A system implementing such a method is also disclosed.

A dry-state non-contact method for patterning of nanostructured conducting materials is disclosed. Short self-generated electron-emission pulses in air at atmospheric pressure can enable an electron-emission-based (field enhancement) interaction between a sharp tungsten tip and elements of the nanostructured materials to cause largely non-oxidative sequential decomposition of the nanostructured elements. Embodiments can employ a substrate/tip gap of 10 to 20 nm, discharge voltages of 25-30 V, and patterning speeds as fast as 10 cm/s to provide precisely patterned nanostructures (<200 nm) that are largely free of foreign contaminants, thermal impact and sub-surface structural changes.

A multi-layer, super-planar laminate structure can be formed from distinctly patterned layers. The layers in the structure can include at least one rigid layer and at least one flexible layer; the rigid layer includes a plurality of rigid segments, and the flexible layer can extend between the rigid segments to serve as a joint. The layers are then stacked and bonded at selected locations to form a laminate structure with inter-layer bonds, and the laminate structure is flexed at the flexible layer between rigid segments to produce an expanded three-dimensional structure, wherein the layers are joined at the selected bonding locations and separated at other locations. A layer with electrical wiring can be included in the structure for delivering electric current to devices on or in the laminate structure.