Patent classifications
B82B1/00
Continuous process for the production of nanostructures including nanotubes
The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.
Continuous process for the production of nanostructures including nanotubes
The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.
ANTIVIRAL AND/OR ANTIBACTERIAL ABRASIVE BLANKET, ANTIVIRAL AND/OR ANTIBACTERIAL CLEANING SPONGE, METHOD FOR MANUFACTURING AN ANTIVIRAL AND/OR ANTIBACTERIAL ABRASIVE BLANKET AND FOR MANUFACTURING AN ANTIVIRAL AND/OR ANTIBACTERIAL CLEANING SPONGE, AND USE OF AN ANTIVIRAL AND/OR ANTIBACTERIAL ABRASIVE BLANKET AND OF AN ANTIVIRAL AND/OR ANTIBACTERIAL CLEANING SPONGE
The present invention relates to an antiviral and/or antibacterial abrasive blanket and an antiviral and/or antibacterial cleaning sponge, in addition to their respective uses. Additionally, the present invention also relates to processes for manufacturing an abrasive blanket with an antiviral and/or antibacterial agent and for manufacturing a cleaning sponge with an antiviral and/or antibacterial agent.
Electromechanical resonators based on metal-chalcogenide nanotubes
This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.
Method of manufacturing glass with hollow nanopillars and glass with hollow nanopillars manufactured thereby
The present invention relates to: a method of manufacturing glass with hollow nanopillars, which includes a silicon oxide layer forming step in which a silicon oxide layer made of silicon oxide is formed on one side of a glass substrate, a first etching step in which the silicon oxide layer is etched and a plurality of silicon oxide clusters are formed on the glass substrate, and a second etching step in which the glass substrate, on which the silicon oxide clusters are formed, is etched and hollow nanopillars are formed; and glass with hollow nanopillars manufactured thereby.
Nanometric electromechanical actuator and method of manufacturing the same
A method for manufacturing an electromechanical actuator includes providing a primary stack of layers comprising a monocrystalline layer, providing a secondary stack of layers, and forming, in the etching layer, at least three pads. The method further includes encapsulating the three pads by a first encapsulation layer, assembling the primary stack of layers with the secondary stack of layers, removing the first substrate, and forming a movable electrode in the monocrystalline layer.
Stabilized metal monolayer structure
A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.
COMPACT ACTUATORS, ELECTRICALLY PROGRAMMABLE MICROSCALE SURFACE OXIDE MEMORY ACTUATORS AND RELATED ROBOTIC DEVICES
Disclosed are devices, systems, and methods for fabrication of moving, actuatable structures at micron scales that can be electronically controlled using low power and low voltages. Also disclosed are microscale robots having such microscale actuator structures to actuate the robots’ movements as well as devices, systems, and methods for fabrication of microscale robots. The disclosed methods of fabrication are compatible with standard semiconductor technologies.
Composite body having nanoparticles uniformly dispersed in nano-sized pores in support, and method for producing same
Provided are a composite in which metal nanoparticles are evenly dispersed and adsorbed to pores of a support, and a method of preparing the same. An amorphous nanostructure formed of inorganic polymers having a transition metal and a halogen element as a main chain via hydrogen bonding is used as a chemical template for forming the metal nanoparticles. The formed metal nanoparticles are evenly dispersed and adsorbed to the support with pores.
Nanofluidic device with silicon nitride membrane
Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.