Embodiments of the present invention relate to a method for using a device for the positioning of molecules, the devise including a semiconductor substrate including a semiconductor layer and an insulating layer with a plurality of electrodes arranged on the insulating layer forming an electrode layer with a layer of 2-dimensional material arranged on the electrode layer. The method includes applying a first set of control signals to the plurality of electrodes to position a plurality of molecules in a first molecule arrangement and applying a second set of control signals to the plurality of electrodes to position the plurality of molecules in a second molecule arrangement, wherein the second set of control signals is different from the first set of control signals and wherein the device provides a first functionality in the first molecule arrangement and a second functionality in the second molecule arrangement.

Novel methods and means for convergent nanofabrication and nanoassembly are disclosed, and systems produced by and performing same are targeted at a broad range of applications. Molecules and/or nanostructures are bound to supported binding means and manipulated to translate such precursors or intermediates to bond together in precisely desired locations and orientations to yield desired precise structures. Methods and means suitable for precise fabrication of a range of materials including diamond, Beta-Silicon-Carbide and related materials, and precise modifications thereof such as color centers in predetermined configuration for quantum computation and information processing and storage applications, and for precise fabrication of halite structured materials including MgO, MgS, TiC, VN, ScN, precisely Mn doped ScN, NbN, HfC, TaC, HfxTayC, AbOS, SrO, BaO, Zr02, ZrC, ZrN, HfN, and also metals including refractory metals such as W are disclosed, yielding an extremely broad range of materials and materials properties which may be availed or utilized.

Nanoassembly methods for producing quasi-3D plasmonic films with periodic nanoarrays of nano-sized surface features. A sacrificial layer is deposited on a surface of a donor substrate having periodic nanoarrays of nanopattern features formed thereon. A plasmon film is deposited onto the sacrificial layer and a dielectric spacer is deposited on the plasmon film. The donor substrate having the sacrificial layer, plasmon film, and dielectric spacer thereon is immersed in a bath of etchant to selectively remove the sacrificial layer such that the plasmon film and the dielectric spacer thereon adhere to the surface of the donor substrate. The dielectric spacer and the plasmon film are mechanically separated from the donor substrate to define a quasi-three dimensional (3D) plasmonic film having periodic nanoarrays of nano-sized surface features defined by the nanopattern features of the donor substrate surface. The quasi-3D plasmonic film is then applied to a receiver substrate.

A method for forming a flow channel in a MIO structure includes positioning a plurality of sacrificial spheres along a base substrate, heating a region of the plurality of sacrificial spheres above a melting point of the plurality of sacrificial spheres, thereby fusing the plurality of sacrificial spheres together and forming a solid channel, electrodepositing material between the plurality of sacrificial spheres and around the solid channel, removing the plurality of sacrificial spheres to form the MIO structure, and removing the solid channel to form the flow channel extending through the MIO structure.

An apparatus, comprising a film (103) comprising a network of conductive and/or semi-conductive high aspect ratio molecular structures is presented. The apparatus also comprises a frame (102) arranged to support the film (103) at least at least two support positions so that a free-standing region (101) of the film (103) extends between the at least two support positions. The two or more electrical contact areas electrically coupled to the film (103), and these electrical contact areas are arranged to pass electric charge across the free-standing region (101) of the film (103) at a current between 0.01 and 10 amperes.

In a method of manufacturing a highly stretchable three-dimensional (3D) percolated conductive nano-network structure, a 3D nano-structured porous elastomer including patterns distributed in a periodic network is formed. A surface of the 3D nano-structured porous elastomer is changed to a hydrophilic state. A polymeric material is conformally adhered on the surface of the 3D nano-structured porous elastomer. The surface of the 3D nano-structured porous elastomer is wet by infiltrating a conductive solution in which a conductive material is dispersed. A 3D percolated conductive nano-network coupled with the 3D nano-structured porous elastomer is formed by evaporating a solvent of the conductive solution and removing the polymeric material.

In a method of manufacturing a highly stretchable three-dimensional (3D) percolated conductive nano-network structure, a 3D nano-structured porous elastomer including patterns distributed in a periodic network is formed. A surface of the 3D nano-structured porous elastomer is changed to a hydrophilic state. A polymeric material is conformally adhered on the surface of the 3D nano-structured porous elastomer. The surface of the 3D nano-structured porous elastomer is wet by infiltrating a conductive solution in which a conductive material is dispersed. A 3D percolated conductive nano-network coupled with the 3D nano-structured porous elastomer is formed by evaporating a solvent of the conductive solution and removing the polymeric material.

A 3D nanopore device for characterizing biopolymer molecules includes a first selecting layer having a first axis of selection. The device also includes a second selecting layer disposed adjacent the first selecting layer and having a second axis of selection orthogonal to the first axis of selection. The device further includes an third electrode layer disposed adjacent the second selecting layer, such that the first selecting layer, the second selecting layer, and the third electrode layer form a stack of layers along a Z axis and define a plurality of nanopore pillars.

A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

A light emitting device, a display device comprising same, and a method for manufacturing a display device are provided. The light emitting device comprises: a first conductivity type semiconductor doped to have a first polarity, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer and doped to have a second polarity different from the first polarity and an insulating material layer surrounding side surfaces of the first conductivity type semiconductor, the second conductivity type semiconductor, and the active layer, wherein the insulating material layer includes an insulating material film and an element orienter bonded to an outer peripheral surface of the insulating material film.