Various embodiments of a phononic system to achieve quantum-analogue phase-based unitary operations are disclosed. A plurality of diatomic molecules is adsorbed on a cubic crystal surface. At least a first pair of parallel chains is created from the plurality of diatomic molecules, such that the two constituent chains of the first pair of parallel chains each comprise three or more diatomic molecules. One or more diatomic molecules of the first pair of parallel chains are displaced in order to thereby create one or more kinks in the first pair of parallel chains. The one or more kinks apply a first desired phase transformation to elastic waves scattered by the plurality of diatomic molecules and adjusting the number of kinks or adjusting the order in which kinks are created or modified causes a corresponding adjustment to the first desired phase transformation.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.

Embodiments of the present disclosure provide plasmonic structures, methods of making plasmonic structures, and the like.

A biosensor electrode comprises comprising a porous structure comprising a plurality of metal ligaments and a plurality of pores; and at least one carbon nanotube structure embedded in the porous structure and comprising a plurality of carbon nanotubes joined end to end by van der Waals attractive force, wherein the plurality of carbon nanotubes are arranged along a same direction.

A new technique, referred to as PSBEE, is disclosed and enables fabrication of freestanding nanomembranes. The PSBEE technique enables fabrication and synthesis of nanomembranes comprising 2D high entropy alloys and 2D metallic glasses and may be extended to ceramics and semiconductors, thereby enabling the fabrication of large-scale freestanding nanomembranes across a wide range of materials, including those deemed to have a great potential for future functional and structural use. To form nanomembranes using PSBEE, a plurality of membranes may be prepared and subjected to thermoplastic compression. Afterwards, one of the membranes may be removed and the remaining membranes may undergo additional thermoplastic compression in the presence of a Si substrate. Once a threshold level of smoothness is achieved, a coating or film may be applied and then separated from the final plate.

Embodiments relate to an apparatus for forming nano-structures with tailored properties on objects while fabricating the objects. The apparatus includes a reservoir that holds compositions therein. Each of the compositions includes a nano-structural material, a plurality of grain growth inhibitor nano-particles, and at least one of a tailoring solute and a plurality of tailoring nano-particles. A nozzle is operatively coupled to the reservoir and a translatable stage is positioned proximate to the nozzle. The stage includes a substrate holder adapted to hold a substrate. A surface profile determination device is positioned proximate to the stage to obtain profile data of the substrate. A control unit is operatively coupled to the device and the stage and regulates manufacture of a pinned nano-structure. The control unit forms deposition layers positioned proximal to the substrate with the compositions through electrospray techniques.

The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

Accelerating photonic and opto-electronic technologies requires breaking current limits of modern chip-scale photonic devices. While electronics and computer technologies have benefited from Moore's Law scaling, photonic technologies are conventionally limited in scale by the wavelength of light. Recent sub-wavelength optical devices use nanostructures and plasmonic devices but still face fundamental performance limitations arising from metal-induced optical losses and resonance-induced narrow optical bandwidths. The present disclosure instead confines and guides light at deeply sub-wavelength dimensions while preserving low-loss and broadband operation. The wave nature of light is used while employing metal-free (all-dielectric) nanostructure geometries which effectively pinch light into ultra-small active volumes, for potentially about 100-1000 reduction in energy consumption of active photonic components such as phase-shifters. The present disclosure could make possible all-optical and quantum computing devices which require extreme optical confinement to achieve efficient light-matter interactions.

Methods of manufacturing well-controlled nanopores using directed self-assembly and methods of manufacturing free-standing membranes using selective etching are disclosed. In one aspect, one or more nanopores are formed by directed self-assembly with block co-polymers to shrink the critical dimension of a feature which is then transferred to a thin film. In another aspect, a method includes providing a substrate having a thin film over a highly etchable layer thereof, forming one or more nanopores through the thin film over the highly etchable layer, for example, by a pore diameter reduction process, and then selectively removing a portion of the highly etchable layer under the one or more nanopores to form a thin, free-standing membrane.