The present invention relates inter alia to a color display comprising nanoparticles and color filters.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

A method of manufacturing a color conversion film includes: providing a substrate having a first surface and a second surface; forming a plurality of first indentations on the first surface and forming a plurality of second indentations on the second surface; forming a plurality of first quantum dot blocks in the first indentations; and forming a plurality of second quantum dot blocks in the second indentations.

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive substrate; a light sensing region on the semiconductive substrate; a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion; and an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region. The waveguide portion includes a first dielectric layer comprising a first refractive index and at least one second dielectric layer comprising a second refractive index, wherein the second refractive index is smaller than the first refractive index.

Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive substrate; a light sensing region on the semiconductive substrate; a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion; and an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region. The waveguide portion includes a first dielectric layer comprising a first refractive index and at least one second dielectric layer comprising a second refractive index, wherein the second refractive index is smaller than the first refractive index.

To provide a quantum dot and manufacturing method of the dot particularly capable of reducing organic residues adhering to the quantum dot surface and of suppressing the black discoloration occurrence of a layer including the quantum dot positioned immediately above a light emitting device, and a compact, sheet member, wavelength conversion member and light emitting apparatus with high luminous efficiency using the quantum dot, a quantum dot of the present invention has a core portion including a semiconductor particle, and a shell portion with which the surface of the core portion is coated, and is characterized in that a weight reduction up to 490° C. is within 75% in a TG-DTA profile. Further, the quantum dot of the invention is characterized in that oleylamine (OLA) is not observed in GC-MS qualitative analysis at 350° C.