Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

A laser source includes a topological cavity for nonreciprocal lasing, a magnetic material and an optical waveguide. The magnetic material is arranged to interact with the topological cavity. The optical waveguide is arranged to receive light extracted from the topological cavity upon breaking of time-reversal symmetry in the topological cavity.

A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.

Colloidal synthesis of narrowly disperse, near IR emitting Group IV alloy quantum dots with wide range of Sn compositions via reduction of precursor halides is provided, allowing for less-toxic, earth abundant, and silicon-compatible Group IV alloy quantum dots for application in a broad range of electronic and photonic technologies.

Colloidal synthesis of narrowly disperse, near IR emitting Group IV alloy quantum dots with wide range of Sn compositions via reduction of precursor halides is provided, allowing for less-toxic, earth abundant, and silicon-compatible Group IV alloy quantum dots for application in a broad range of electronic and photonic technologies.

A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

This disclosure relates to an optical device comprising: a first filter waveguide section having an input for receiving a pump signal, the first filter waveguide section further having an output; an emitter waveguide section having an input coupled to the output of the first filter waveguide section to receive a transmitted pump signal therefrom, the emitter waveguide section supporting at least a first guided lower-order optical mode and a second guided higher-order optical mode, the emitter waveguide section comprising a photon emitter coupled to the first guided mode to emit radiation into the first guided mode and coupled to the second guided mode to allow optical pumping of the photon emitter by pump signal power carried in the second guided mode, the emitter waveguide section further having an output for outputting radiation emitted from the photon emitter; a second filter waveguide section having an input coupled to the output of the emitter waveguide section and having an output, the second filter waveguide section being configured to transmit radiation emitted into the first guided mode with lower loss than radiation emitted into modes other than the first guided mode; the first filter waveguide section being configured to couple pump signal power predominantly into the second guided mode of the emitter section.