Methods and apparatus are disclosed for triggering an exothermic reaction under a high hydrogen loading rate. It is generally understood that a high hydrogen loading ratio is an important factor. The present application teaches that a high hydrogen loading rate, that is, achieving a high hydrogen loading ratio in a short period of time, is another important factor in determining whether excess heat can be observed in an exothermic reaction. The present application discloses methods and apparatus for achieving a high hydrogen loading rate in order to trigger an exothermic reaction.

The present disclosure relates to a composition that includes a material of at least one of a perovskite structure, a perovskite-like structure, and/or a perovskitoid structure, where the material includes an isotope of an element, the isotope has more neutrons than protons, and the isotope is incorporated into the perovskite structure, the perovskite-like structure, and/or the perovskitoid structure. In some embodiments of the present disclosure, the isotope may make up between greater than 0% and 100% of the element.

The present disclosure relates to a composition that includes a material of at least one of a perovskite structure, a perovskite-like structure, and/or a perovskitoid structure, where the material includes an isotope of an element, the isotope has more neutrons than protons, and the isotope is incorporated into the perovskite structure, the perovskite-like structure, and/or the perovskitoid structure. In some embodiments of the present disclosure, the isotope may make up between greater than 0% and 100% of the element.

Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.

Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.

Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.

Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.

In one embodiment, a semiconductor manufacturing apparatus includes a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance. The apparatus further includes a disposer configured to discard the first gas discharged from the substrate processor. The apparatus further includes a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor.

Methods and apparatus are disclosed for triggering an exothermic reaction under a high hydrogen loading rate. It is generally understood that a high hydrogen loading ratio is an important factor. The present application teaches that a high hydrogen loading rate, that is, achieving a high hydrogen loading ratio in a short period of time, is another important factor in determining whether excess heat can be observed in an exothermic reaction. The present application discloses methods and apparatus for achieving a high hydrogen loading rate in order to trigger an exothermic reaction.

Methods and systems directed to the separation of tritium from an aqueous stream are described. The separation method is a multi-stage method that includes a first stage during which tritium of a tritium-contaminated aqueous stream is adsorbed onto a separation phase, a second stage during which the adsorbed tritium is exchanged with hydrogen in a gaseous stream to provide a gaseous stream with a high tritium concentration, and a third stage during which the tritium of the gaseous stream is separated from the gaseous stream as a gaseous tritium product.