Forming multifunctional materials and composites thereof includes contacting a first material having a plurality of oxygen-containing functional groups with a chalcogenide compound, and initiating a chemical reaction between the first material and the chalcogenide compound, thereby replacing oxygen in some of the oxygen-containing functional groups with chalcogen from the chalcogen-containing compound to yield a second material having chalcogen-containing functional groups and oxygen-containing functional groups. The first material is a carbonaceous material or a macromolecular material. A product including the second material is collected and may be processed further to yield a modified product or a composite.

Forming multifunctional materials and composites thereof includes contacting a first material having a plurality of oxygen-containing functional groups with a chalcogenide compound, and initiating a chemical reaction between the first material and the chalcogenide compound, thereby replacing oxygen in some of the oxygen-containing functional groups with chalcogen from the chalcogen-containing compound to yield a second material having chalcogen-containing functional groups and oxygen-containing functional groups. The first material is a carbonaceous material or a macromolecular material. A product including the second material is collected and may be processed further to yield a modified product or a composite.

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Described are Zn.sub.xCd.sub.1-xS.sub.ySe.sub.1-y/ZnS.sub.zSe.sub.1-z core/shell nanocrystals, CdTe/CdS/ZnS core/shell/shell nanocrystals, optionally doped Zn(S,Se,Te) nano- and quantum wires, and SnS quantum sheets or ribbons, methods for making the same, and their use in biomedical and photonic applications, such as sensors for analytes in cells and preparation of field effect transistors.

A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX.sub.2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX.sub.2 polycrystalline powder, a MX.sub.2 seed crystal, and a transport medium. The MX.sub.2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX.sub.2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX.sub.2 seed crystal is placed at the deposition end.

Methods of forming transition metal dichalcogenide aerogels are provided. Some methods include adding at least one solvent to one or more two-dimensional transition metal dichalcogenide sheets to form a transition metal dichalcogenide solution and freeze drying the transition metal dichalcogenide solution to form frozen transition metal dichalcogenide. The methods also include heating the frozen transition metal dichalcogenide to form a transition metal dichalcogenide aerogel.

A radical anion based functionalization of two-dimensional (2D) layered materials is proposed. The covalent functionalization of the basal plane of 2D materials with charge neutral radicals is typically unstable to reduction, leading to detachment of the functional groups from the basal plane upon reduction. This instability hinders the use of functionalized 2D materials as rechargeable electroactive species, unless the functional groups are bound to the edges of the 2D material. However, to achieve high capacity without the creation of many edges and defects, a stable functionalization of the basal plane in the reduced state is required. This goal can be achieved by radical anion functionalization, whereby the reduced/discharged state of the basal-plane-functionalized 2D material is produced. The product of the radical anion functionalization can be used as the discharged state of a cathode active material, solid electrolyte or part of a polymer composite.

The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.

Disclosed are a transition metal dichalcogenide alloy and a method of manufacturing the same. A method of manufacturing a transition metal dichalcogenide alloy according to an embodiment of the present disclosure includes a step of depositing transition metal dichalcogenide on a substrate using atomic layer deposition (ALD); and a step of forming a transition metal dichalcogenide alloy by thermally treating the transition metal dichalcogenide with a sulfur compound.