The present disclosure describes radiation-assisted, substrate-free, and solution-based nanostructure (e.g., a nanotube and/or a nanowire (NW)) growth processes. The processes use the high absorption coefficient and high density of free charge carriers in particle seeds (e.g., nanoparticles, metal nanoparticles, and/or metal nanocrystals) to photothermally drive semiconductor nanostructure growth. The processes can be performed at atmospheric pressure, without specialized equipment such as specialized heating equipment and/or high-pressure reaction vessels.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ≥70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 pm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

Disclosed in the present invention is a nonlinear optical crystal. The chemical formula of the nonlinear optical crystal is MHgGeSe.sub.4, M being selected from Ba or Sr. The nonlinear optical crystal has no symmetrical center, belongs to an orthorhombic crystal system, and has a space group Ama2. The nonlinear optical crystal is an infrared nonlinear optical crystal, and has the advantages of great nonlinear optical effect, wide light transmitting band, high hardness, good mechanical properties, breakage resistance, deliquescence resistance, easiness in processing and preserving, etc. Also disclosed in the present invention are a method for preparing the nonlinear optical crystal and application thereof.

The invention provides process for preparing tin or germanium monochalcogenides of cubic crystalline structure, the process comprises combining a source of tin or germanium and a source of chalcogenide in a reaction vessel in the presence of uncharged liquid primary amine R—NH.sub.2 and a charged form R—NH.sub.3+ associated with a counter anion, wherein R is saturated or unsaturated hydrocarbyl, which may be the same or different in the uncharged and charged forms, and recovering from the reaction mixture an essentially pure cubic phase of the monochalcogenides.

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot.

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(R is as defined in the specification.)

The electroluminescent element includes a QD layer and an electron transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The electron transport layer contains zinc oxide. A film thickness of the electron transport layer is 15 nm or more and 85 nm or less.

The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.

The electroluminescent element includes a QD layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The film thickness of the QD layer is 12 nm or more and 49 nm or less.

The electroluminescent element includes a QD layer and a hole transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The hole transport layer includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)]. A film thickness of the hole transport layer is 10 nm or more and 57 nm or less.