A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.

A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

An embodiment of the present invention provides a noble gas hydride having the following formula 1: Ng.sub.nH.sub.m. In formula 1, Ng represents a noble gas atom, n represents an integer from 1-8, and m represents an integer from 1-46.

Methods and systems for producing Xenon-133 are disclosed. A method for producing Xenon-133 includes collecting an off gas from a Molybdenum-99 production process in a storage tank. The off gas includes Xenon-133 and Krypton-85. The method further includes selectively adsorbing Xenon-133 from the off gas onto a charcoal column assembly such that Xenon-133 is selectively adsorbed onto the charcoal column assembly relative to Krypton-85. The method further includes desorbing the Xenon-133 from the charcoal column assembly by heating the charcoal column assembly, and condensing the Xenon-133 within a coil assembly.

Disclosed is a method for purifying a main gas, in particular helium, from a source gas stream comprising the main gas, a main impurity, in particular nitrogen, and optionally another, secondary impurity, in particular oxygen, the method comprising a step of partial condensation of the gas stream in order to extract therefrom impurities in liquid form, in particular the main impurity, and to produce a gas stream enriched with main gas, characterized in that the method comprises, before the partial condensation step, a step of injecting into the gas stream a compound in which the main impurity of the gas to be treated is soluble and having a saturation vapor pressure lower than the saturation vapor pressure of the main impurity.

The invention relates to the technical field of membrane separation, and discloses a hollow fiber membrane and preparation method and use thereof. The hollow fiber membrane includes a support, a selective layer, and a transition layer between the support and the selective layer, wherein at least a portion of the transition layer is embedded in the support. The hollow fiber membrane has a high selectivity and good mechanical properties.

The present invention provides systems and methods for simultaneously producing a high-purity helium gas product, a methanol-water liquid mixture, and a methane-rich fuel product from a hydrogen-rich feedstock gas containing helium by treating the hydrogen-rich feedstock gas containing helium and carbon dioxide in a reverse water gas shift unit (1500) to produce carbon monoxide, which is then treated in a methanol production unit (300) and a methanol absorption unit (400) to produce a methanol-aqueous solution and a methanol-free gas. The methanol-free gas is then treated in a methane production unit (500) to produce methane, which is then treated in a carbon dioxide recovery membrane unit (1100) and a cryogenic nitrogen rejection unit (600) to produce the methanol-water liquid mixture, the methane-rich fuel product, and a helium-rich gas. The helium-rich gas is then treated to produce the high-purity helium gas product.

A coil assembly for separation of Xenon-133 from an off gas stream includes a coil flange having first and second sides and defining a flange inlet and outlet. The coil assembly further includes a coil positioned on the first side of the coil flange. The coil includes inlet and outlet portions and a helical portion having a double-helix configuration. The helical portion has a top positioned a first distance from the first side of the coil flange. The inlet portion extends through the flange inlet, the outlet portion extends through the flange outlet, and the helical portion is fluidly connected to the inlet and outlet portions. The coil assembly further includes a fluid control assembly attached to the second side of the coil flange, including inlet and outlet assemblies. The inlet portion is fluidly connected to the inlet assembly and the outlet portion is fluidly connected to the outlet assembly.