Provided is a sulfide solid electrolyte material which has a composition that does not contain Ge, while having a smaller Li content than conventional sulfide solid electrolyte materials, and which has both lithium ion conductivity and chemical stability at the same time. A sulfide solid electrolyte which has a crystal structure represented by composition formula (Li.sub.3.45+4Sn.sub.)(Si.sub.0.36Sn.sub.0.09)(P.sub.0.55Si.sub.)S.sub.4 (wherein 0.67, 0.33 and 0.43<+ (provided that 0.23<0.4 when =0.2 and 0.13<0.4 when =0.3 may be excluded)), or a crystal structure represented by composition formula Li.sub.7+Si.sub.P.sub.1S.sub.6 (wherein 0.1<0.3).

Provided is a sulfide solid electrolyte material which has a composition that does not contain Ge, while having a smaller Li content than conventional sulfide solid electrolyte materials, and which has both lithium ion conductivity and chemical stability at the same time. A sulfide solid electrolyte which has a crystal structure represented by composition formula (Li.sub.3.45+4Sn.sub.)(Si.sub.0.36Sn.sub.0.09)(P.sub.0.55Si.sub.)S.sub.4 (wherein 0.67, 0.33 and 0.43<+ (provided that 0.23<0.4 when =0.2 and 0.13<0.4 when =0.3 may be excluded)), or a crystal structure represented by composition formula Li.sub.7+Si.sub.P.sub.1S.sub.6 (wherein 0.1<0.3).

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period.

A positive-electrode active material contains a compound represented by the following composition formula (1):

Li.sub.xMe.sub.yA.sub.zO.sub.F.sub.(1) where Me denotes one or more elements selected from the group consisting of Mn, Co, Ni, Fe, Al, Cu, Nb, Mo, Ti, Cr, Zr, Zn, Na, K, Ca, Mg, Pt, Au, Ru, and W, A denotes one or more elements selected from the group consisting of B, Si, and P, and the following conditions: 1.3x2.1, 0.8y1.3, 0<z0.2, 1.82.9, and 0.11.2 are satisfied. A crystal structure of the compound belongs to a space group Fm-3m.

Provided is a silicon-based composite with three dimensional binding network and enhanced interaction between binder and silicon-based material, which comprises silicon-based material, treatment material, a binder containing carboxyl groups and conductive carbon, wherein the treatment material is selected from the group consisting of polydopamine or silane coupling agent with amine and/or imine groups. Also provided are an electrode material and a lithium-ion battery comprising the silicon-based composite, and a process for preparing the silicon-based composite.

Provided is an anode composition for lithium ion batteries, comprising a) a silicon-based active material; b) a carboxyl-containing binder; and c) a silane coupling agent. Also provided are a process for preparing an anode for lithium ion batteries and a lithium ion battery.

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6jk2l3m4n=w; 0.8t1; 3.5u4; 3.5v4; (0.2)w0.2 and 0m<0.875 v and/or v1>0.125 v.