The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contacts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region an spatially disposed within spatial regions not occupied by the first active regions. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li.sub.aMP.sub.bS.sub.c (LMPS) [M=Si, Ge, and/or Sn] containing material.

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contacts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region an spatially disposed within spatial regions not occupied by the first active regions. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li.sub.aMP.sub.bS.sub.c (LMPS) [M=Si, Ge, and/or Sn] containing material.

Particular embodiments may provide an anode material, comprising a compound of formula Li.sub.2XY, wherein: X and Y are each independently a metal atom or a metalloid atom; the anode material has a discharge potential of less than about 0.4 V vs. Li/Li.sup.+; and the molar ratio of Li:X:Y is 2:1:1.

Particular embodiments may provide an anode material, comprising a compound of formula Li.sub.2XY, wherein: X and Y are each independently a metal atom or a metalloid atom; the anode material has a discharge potential of less than about 0.4 V vs. Li/Li.sup.+; and the molar ratio of Li:X:Y is 2:1:1.

Porous compositions and methods of making and using same. The compositions may be one or more layer(s) of mesoporous inorganic materials. The mesoporous inorganic material(s) may be a plurality of inorganic nanocages, which may be microporous. A composition may include homostacks of layers of the same inorganic mesoporous materials. A composition may include heterostacks of layers of inorganic mesoporous materials, where at least two of the layers are different. The compositions may be surface functionalized. The compositions may be formed in a reaction mixture including one or more precursor(s), one or more surfactant(s), water, and one or more organic solvent(s). The compositions may be formed at the liquid-liquid interface between the water and the one or more organic solvent(s). A composition may be used as a catalyst, in a catalytic method, as a separation medium, in a separation method, in nanomedicine applications, or the like.

The present invention provides a -cesium cadmium silicon sulfide compound, a -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal, as well as their preparation methods and applications. The -cesium cadmium silicon sulfide compound has a chemical formula -Cs.sub.2CdSi.sub.4S.sub.10 and a molecular weight of 755.04. The -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal belongs to the tetragonal crystal system, its space group is I-4, and its unit cell parameters are: a=8.4233(7) , c=14.6136(12) , and the unit cell volume is 1036.86(19) .sup.3. The present invention adopts a vacuum packaging method to prepare a -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal. By using the kurtz-berry method, it was found that the frequency doubling effect of -Cs.sub.2CdSi.sub.4S.sub.10 crystal is approximately 1.1-1.2 times that of AgGaS.sub.2(AGS). By using the UV-visible diffuse reflection, it was found that the -Cs.sub.2CdSi.sub.4S.sub.10 crystal has the crystal bandgap of 4.21 eV, the UV cutoff edge of 254 nm, and the infrared transparency range greater than 13 m. The preparation method of the -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal of the present invention is simple, with a short growth period, and avoids the leakage and contamination of raw materials. The -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal of the present invention can be used to fabricate conversion devices for high-power laser output applications and has important applications in atmospheric remote sensing and communication fields.

The present invention provides a -cesium cadmium silicon sulfide compound, a -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal, as well as their preparation methods and applications. The -cesium cadmium silicon sulfide compound has a chemical formula -Cs.sub.2CdSi.sub.4S.sub.10 and a molecular weight of 755.04. The -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal belongs to the tetragonal crystal system, its space group is I-4, and its unit cell parameters are: a=8.4233(7) , c=14.6136(12) , and the unit cell volume is 1036.86(19) .sup.3. The present invention adopts a vacuum packaging method to prepare a -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal. By using the kurtz-berry method, it was found that the frequency doubling effect of -Cs.sub.2CdSi.sub.4S.sub.10 crystal is approximately 1.1-1.2 times that of AgGaS.sub.2(AGS). By using the UV-visible diffuse reflection, it was found that the -Cs.sub.2CdSi.sub.4S.sub.10 crystal has the crystal bandgap of 4.21 eV, the UV cutoff edge of 254 nm, and the infrared transparency range greater than 13 m. The preparation method of the -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal of the present invention is simple, with a short growth period, and avoids the leakage and contamination of raw materials. The -Cs.sub.2CdSi.sub.4S.sub.10 infrared nonlinear optical crystal of the present invention can be used to fabricate conversion devices for high-power laser output applications and has important applications in atmospheric remote sensing and communication fields.