A multiple-atom germanium quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated germanium surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.

A multi-atomic layered material and methods of making and using the same are described. The material can include a first 2D non-carbon mono-element atomic layer, a second 2D non-carbon mono-element atomic layer, and intercalants positioned between the first and second atomic layers.

A multi-atomic layered material and methods of making and using the same are described. The material can include a first 2D non-carbon mono-element atomic layer, a second 2D non-carbon mono-element atomic layer, and intercalants positioned between the first and second atomic layers.

This disclosure relates to novel metal hydrides, processes for their preparation, and their use in hydrogen storage applications.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSi.sub.b, in which the range of values a and bis: 0≤a≤0.0001, and −a+0.0003≤b≤0.023; 0.0001≤a<0.0003, and −a+0.0003≤b≤exp[−0.046×(In(a)).sup.2−1.03×In(a)−9.51]; or 0.0003≤a≤0.085, and 0<b≤exp[−0.046×(In(a)).sup.2−1.03×In(a)−9.51], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

A composite powder for use in the negative electrode of a battery, whereby the composite powder comprises composite particles, whereby the composite particles comprise a matrix material and silicon, whereby the composite particles have a particle size distribution having a d10 and a d90, whereby over at least part of the size range from d10 to d90 the composite particles have a size-dependent silicon content. Preferably a finer fraction of the composite powder has an average particle size D1 and a silicon content S1 and a coarser fraction of the composite powder has an average particle size D2 and a silicon content S2, whereby a size dependence factor F is defined as follows F=(S2S1)/(D2D1), whereby the absolute value of the size dependence factor F is at least 0.04 wt % silicon/m.

A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or 1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.

A method for forming a crystalline material having an anisotropic, quasi-one-dimensional crystal structure is disclosed. In various embodiments, the method includes: mixing a plurality of precursor materials together to form a combined precursor material, the plurality of precursor materials including a transition-metal ion or a main group ion and at least one of an alkaline earth ion or an alkali metal ion; and reacting the combined precursor material to obtain the crystalline material, the crystalline material having a formula ABX3, wherein A is the at least one of the alkaline earth ion or the alkali metal ion and B is the transition-metal ion surrounded by six anions (X), and wherein the quasi-one-dimensional anisotropic crystal provides a birefringence of at least 0.03, defined as the absolute difference in the real part of the complex-refractive-index values along different crystal axes, in at least a portion of one or N both of the visible-wave spectrum or the infrared spectrum.