An ammonia solution production device produces a dilute ammonia solution by supplying ammonia from an ammonia supply device to ultrapure water supplied from an ultrapure water production device and dissolving the ammonia, and supplies the ammonia solution to a use point. Here, the ultrapure water production device has the ability to supply ultrapure water having a resistance value of 18 M.Math.cm or more, and a metal ion concentration of 1 ng/L or less, particularly 0.1 ng/L or less. Ammonia is added to the ultrapure water from the ammonia supply device to produce the dilute ammonia water. The ammonia solution production device is suitable for the production of dilute ammonia water having an ammonia concentration of 100 mg/L or less. Such an ammonia solution production device is capable of producing an ammonia solution with a stable concentration, and achieves excellent follow-up performance with respect to a change in the concentration.

A combustion device burns fuel ammonia in a combustion chamber using compressed combustion air, and includes a combustion air cooling unit which is configured to cool the combustion air by heat exchange with the fuel ammonia during or before a compression process.

A floating vessel for use as a hydrogen and/or ammonia floating production storage and offloading vessel comprising an inner hull wall; at least two bulkheads, wherein the at least two bulkheads are disposed within the inner hull wall, forming at least three separate storage spaces; a series of cross-members, wherein the series of cross members are disposed between the at least two bulkheads to provide support and stability to the at least two bulkheads; and a deck, wherein the deck is supported by and disposed upon the at least two bulkheads; and wherein the at least three separate storage spaces are configured to contain gasses and/or liquids.

A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO.sub.2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO.sub.2 film by bringing a fluid containing O and H into contact with the surface of the SiO.sub.2 film; and performing a film forming processing of forming the Ti-containing film on the SiO.sub.2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO.sub.2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO.sub.2 film by bringing a fluid containing O and H into contact with the surface of the SiO.sub.2 film; and performing a film forming processing of forming the Ti-containing film on the SiO.sub.2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

The disclosure relates to an ammonia storage structure in particular for the selective catalytic reduction of nitrogen oxides in the exhaust gases of combustion vehicles, where the structure includes at least one element for storing a gas such as ammonia, in the form of a porous matrix, with which an irrigating device the storage element are associated. The disclosure also relates to an ammonia storage and removal system of a vehicle that includes a storage chamber receiving such a storage structure, a selective catalytic reduction system for internal combustion engine exhaust gases, including such an ammonia storage system and to a module for feeding ammonia into the exhaust gases, and, finally, to a monolithic porous matrix for storing a gas, where the matrix contains the irrigation device in the interior thereof, in order to promote the sorption/desorption of the gas in the matrix.

A mercury sorbent and method for enhancing mercury removal performance of activated carbon from flue gas by the addition of non-halogen ammonium-containing compounds are provided herein.

An ammonia-producing system comprises a reactor that catalytically converts nitrogen and hydrogen feed gases to ammonia to form a reaction mixture of the ammonia, unreacted nitrogen gas, and unreacted hydrogen gas. A feed system feeds the nitrogen and hydrogen gases to the reactor at a reaction pressure of from about 9 to about 100 atmospheres. A reactor control system controls the temperature during conversion of the nitrogen and hydrogen to ammonia by maintaining a reaction temperature of from about 330 C. to about 550 C. An absorbent selectively absorbs at least a portion of the ammonia from the reaction mixture, and an absorbent control system controls one or both of a temperature and pressure at the absorbent during selective absorption of the ammonia from the reaction mixture. A recycle line downstream of the absorbent recycles the unreacted nitrogen and unreacted hydrogen to the reactor.