The present disclosure is directed to a group of newly discovered intrinsic scintillation compounds. As intrinsic scintillators, these compounds do not require an external activator as a dopant. The new scintillators may include members of two elpasolite families with the general exemplary formulas of A.sub.2BMX.sub.(6-y)X.sub.y and A.sub.3MX.sub.(6-y)X.sub.y, (0<y<6). Component A may include at least one element selected from the group consisting alkali elements and thallium (Li, Na, K, Rb, Cs and Tl); Component B may include at least one element, different from the at least one element of component A, selected from the group consisting alkali elements (Li, Na, K, Rb, and Cs); Component M may include at least one element selected from the group consisting tri-valence elements (La, Gd, Lu, Bi, Y); Component X may include at least one element selected from the group consisting halide elements (F, Cl, Br and I); Component X may include at least one element, different from the at least one element of component X, selected from the group consisting halide elements (F, Cl, Br and I). The value of y may be in a range between 0 and 6 non-inclusively (i.e. 0<y<6, or y={1, 2, 3, 4, 5}).

An anolyte includes a deformable halide-based ionic conductor having one of the following formulas: CsLi.sub.2Cl.sub.3, wherein the CsLi.sub.2Cl.sub.3 has an orthorhombic crystal structure, NaLi.sub.3I.sub.4, NaLi.sub.3Br.sub.4, NaLi.sub.3Cl.sub.4, and KLi.sub.2F.sub.3. A solid state battery includes an anode, a cathode, and a solid electrolyte, wherein the solid state battery comprises the aforementioned anolyte.

The present invention relates to a method for producing a cesium halide, and more particularly, to a novel method for producing a cesium halide with high purity; and perovskites produced using same.

A perovskite powder, a light emitting layer for a light emitting device, a perovskite layered structure, an optoelectronic device including the same, and a method for manufacturing the same are provided. The perovskite powder is easy to control the crystal phase ratio in the light emitting layer and is not pyrolyzed during deposition. In addition, the light emitting layer for the light emitting device has an enhanced exciton confinement effect to have excellent light emission efficiency and the like. In addition, the method for manufacturing the light emitting layer for the light emitting device may control the ratio of crystal phases in the light emitting layer and is advantageous for large-area manufacturing. In addition, the perovskite layered structure maintains very high phase uniformity. Further, the optoelectronic device has excellent performance. Furthermore, the method for manufacturing the perovskite layered structure may manufacture a large-area and uniform perovskite thin film.

Described herein is a method for combining waste-loaded zeolites and geopolymers with glass-forming components to produce materials with improved chemical durability and stability.