A method of synthesizing an inorganic precursor for an ionic conductor includes mixing at least one oxide of M with at least one halide of M, heating the mixture of the at least one oxide of M and the at least one halide of M and forming an MOX inorganic oxyhalide compound, and injecting defects in the MOX inorganic oxyhalide compound and forming a defect doped (MOX)′ precursor for an ionic conductor. The element or component M is selected from at least one of Fe, Al, La, and Y, the at least one halide of M is selected from at least one of a fluoride of M, a chloride of M, a bromide of M, and an iodide of M, and the element or component X is at least one of F, Cl, Br, and I.

In a method for recovering active metals of a lithium secondary battery according to an embodiment, a cathode active material mixture is collected from the cathode of the lithium secondary battery, the cathode active material mixture is reduced by a reducing reaction to prepare a preliminary precursor mixture, an aqueous lithium precursor solution is formed from the preliminary precursor mixture, and an aluminum-containing material is removed from the aqueous lithium precursor solution with an aluminum removing resin.

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

The present invention provides a novel method for producing a calcium aluminate compound having a modified surface. The present invention provides: a method for producing a modified calcium aluminate compound characterized by irradiating a calcium aluminate compound dispersed in an organic dispersion medium with a femtosecond laser, thereby modifying the surface of the calcium aluminate compound; and a modified calcium aluminate compound characterized by being obtained by this method and having at least one of an OH group, a CO group, a CH group, and an NH group.

A method for preparing an anion adsorbent may be provided, which comprises the steps of: mixing at least two metal salts with each other, thereby forming a stack structure in which cationic compound layers and anionic compound layers containing anions and water of crystallization are alternately stacked on one another; performing a first heat treatment on the stack structure to expand between the cationic compound layers, thereby preparing a preliminary anion adsorbent; and performing a second heat treatment on the preliminary anion adsorbent to remove the anions and the water of crystallization from the anionic compound layers while allowing at least one of the anions to remain, thereby preparing the anion adsorbent.

A dense β″-alumina/zirconia composite solid electrolyte and process for fabrication are disclosed. The process allows fabrication at temperatures at or below 1600° C. The solid electrolytes include a dense composite matrix of β″-alumina and zirconia, and one or more transition metal oxides that aid the conversion and densification of precursor salts during sintering. The composite solid electrolytes find application in sodium energy storage devices and power-grid systems and devices for energy applications.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

The present invention relates to a process for modifying a layered double hydroxide (LDH), the process comprising, a. providing a water-wet layered double hydroxide of formula:
[M.sup.z+.sub.1-xM′.sup.y+.sub.x].sup.a+(X.sup.n−).sub.a/r.bH.sub.2O   (1) wherein M and M′ are metal cations, z=1 or 2; y=3 or 4, x is 0.1 to 1, preferably x<1, more preferably x=0.1-0.9, b is greater than 0 to 10, X is an anion, r is 1 to 3, n is the charge on the anion X and a is determined by x, y and z, preferably a=z(1-x)+xy-2; b. maintaining the layered double hydroxide water-wet, and c. contacting the water-wet layered double hydroxide with at least one solvent, the solvent being miscible with water and preferably having a solvent polarity (P′) in the range 3.8 to 9,
as well as to a layered double hydroxide prepared according to that process.