A metal sulfide negative material of a sodium ion battery and a preparation method thereof. The material has porous nanoparticles with a particle size of 5 nm to 500 nm, and the metal sulfide negative material of the sodium ion battery is at least one of zinc sulfide or copper sulfide. The preparation method includes the steps of preparing a mixed solution of stannous chloride and metal salt, adding polyvinylpyrrolidone into the mixed solution to obtain a solution A, introducing reaction gas into the solution A, aging after the reaction to obtain a precipitate, and soaking the precipitate in a persulfide solution to obtain the metal sulfide sodium ion battery negative material.

A metal sulfide negative material of a sodium ion battery and a preparation method thereof. The material has porous nanoparticles with a particle size of 5 nm to 500 nm, and the metal sulfide negative material of the sodium ion battery is at least one of zinc sulfide or copper sulfide. The preparation method includes the steps of preparing a mixed solution of stannous chloride and metal salt, adding polyvinylpyrrolidone into the mixed solution to obtain a solution A, introducing reaction gas into the solution A, aging after the reaction to obtain a precipitate, and soaking the precipitate in a persulfide solution to obtain the metal sulfide sodium ion battery negative material.

This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSe.sub.XS.sub.(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSe.sub.YS.sub.(1-Y) and Cd.sub.(Z)Zn.sub.(1-Z)S, the second shell covering the first shell being one of Cd.sub.(Z)Zn.sub.(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSe.sub.XS.sub.(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.

Quantum dots surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2, a curable composition including the quantum dots, a cured layer, and a color filter. ##STR00001## In Chemical Formula 1 and Chemical Formula 2, each substituent is the same as defined in the specification.

Quantum dots surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2, a curable composition including the quantum dots, a cured layer, and a color filter. ##STR00001## In Chemical Formula 1 and Chemical Formula 2, each substituent is the same as defined in the specification.

A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

An aqueous iron sulfide dissolver including zinc, chromium, a methoxybenzoic acid, formic acid, acetic acid, and hydrochloric acid. The iron sulfide dissolver is made by combining these components, and dissolves compounds including iron sulfide upon contact. Evolved hydrogen sulfide reacts with the methoxybenzoic acid to yield solubilized methanethiol as an intermediate product, which is further oxidized to yield dissolved dimethyl disulfide.

An aqueous iron sulfide dissolver including zinc, chromium, a methoxybenzoic acid, formic acid, acetic acid, and hydrochloric acid. The iron sulfide dissolver is made by combining these components, and dissolves compounds including iron sulfide upon contact. Evolved hydrogen sulfide reacts with the methoxybenzoic acid to yield solubilized methanethiol as an intermediate product, which is further oxidized to yield dissolved dimethyl disulfide.

A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.

Disclosed is a method for manufacturing calcium zincate crystals including: placing calcium hydroxide.sub.2 and zinc oxide, one of the precursors thereof, or one of the water mixtures thereof in a starting suspension, the mass ratio of water to calcium hydroxide and zinc oxide, or one of the precursors or mixtures thereof, being greater than or equal to 1; milling the starting suspension to an ambient temperature less than or equal to 50 C. in a wet-phase three-dimensional micro-ball mill for a residence time less than or equal to 15 minutes and in particular from 5 to 25 seconds; recovering a calcium zincate crystal suspension coming out of the mill; and optionally, concentrating or drying the calcium zincate crystal suspension so as to obtain a calcium zincate crystal powder. Also disclosed are uses associated with the calcium zincate crystals obtained according to the method described above.