The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

The invention provides hydrotalcite that can inhibit foaming and can exhibit excellent heat stability when added to resins such as chlorine-containing resins, while also inhibiting resin coloration, without the combined use of additives with the resins. The hydrotalcite of the invention is represented by formula (1) and has a specific surface area of 120 m.sup.2/g to 250 m.sup.2/g as determined by the BET method.

M.sup.2+.sub.xZn.sub.y.Math.M.sup.3+.sub.zO.sub.x+y+(3/2)z(1) (In the formula, M.sup.2+ represents at least one divalent metal ion, M.sup.3+ represents at least one trivalent metal ion, and x, y and z represent numbers satisfying 0<x? 0.5, 0<y? 0.2 and 0<z?0.4.)

The invention provides hydrotalcite that can inhibit foaming and can exhibit excellent heat stability when added to resins such as chlorine-containing resins, while also inhibiting resin coloration, without the combined use of additives with the resins. The hydrotalcite of the invention is represented by formula (1) and has a specific surface area of 120 m.sup.2/g to 250 m.sup.2/g as determined by the BET method.

M.sup.2+.sub.xZn.sub.y.Math.M.sup.3+.sub.zO.sub.x+y+(3/2)z(1) (In the formula, M.sup.2+ represents at least one divalent metal ion, M.sup.3+ represents at least one trivalent metal ion, and x, y and z represent numbers satisfying 0<x? 0.5, 0<y? 0.2 and 0<z?0.4.)

A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

A quantum dot includes a core, a first shell and a second shell. The core includes a group III-V compound. The first shell includes a second semiconductor nanocrystal. The second semiconductor nanocrystal includes zinc, selenium and a dopant including tellurium. The second shell includes a third semiconductor nanocrystal. The third semiconductor nanocrystal includes a II-VI compound.

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6jk2l3m4n=w; 0.8t1; 3.5u4; 3.5v4; (0.2)w0.2 and 0m<0.875 v and/or v1>0.125 v.

Nanoplatelet forms of metal hydroxide and metal oxide are provided, as well as methods for preparing same. The nanoplatelets are suitable for use as fire retardants and as agents for chemical or biological decontamination.

Nanoplatelet forms of metal hydroxide and metal oxide are provided, as well as methods for preparing same. The nanoplatelets are suitable for use as fire retardants and as agents for chemical or biological decontamination.

A flame retardant resin composition comprises a polyolefin resin, calcium carbonate particles blended at a ratio of 5 pts. mass to 80 pts. mass, aluminum hydroxide blended at a ratio of 50 pts. mass to 125 pts. mass, a silicone-based compound blended at a ratio of more than 1 pt. mass and 10 pts. mass or less, a fatty acid-containing compound blended at a ratio of 3 pts. mass to 20 pts. mass, and a zinc-containing inorganic compound blended at a ratio of 1 pt. mass to 7 pts. mass, all relative to 100 pts. mass of the polyolefin resin. In the flame retardant resin composition, the calcium carbonate particles and the aluminum hydroxide are blended in total at a ratio of 55 pts. mass to 130 pts. mass relative to 100 pts. mass of the polyolefin resin.