An ink including at least one colloidal dispersion of particles and at least one metal halide binder, wherein the binder is a dissociated salt of metal and halogen. Also, a method for preparing a light-sensitive material, a light-sensitive material obtainable by the method, and a device including at least one light-sensitive material obtainable by the method.

An ink including at least one colloidal dispersion of particles and at least one metal halide binder, wherein the binder is a dissociated salt of metal and halogen. Also, a method for preparing a light-sensitive material, a light-sensitive material obtainable by the method, and a device including at least one light-sensitive material obtainable by the method.

A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

Focusing on zinc oxide itself, which is a main raw material for a zinc oxide varistor (laminated varistor), a predetermined amount of additive is added to a zinc oxide powder having crystallite size of 20 to 100 nm, particle diameter of 20 to 110 nm found using a specific area BET method, untamped density of 0.60 g/cm.sup.3 or greater, and tap density of 0.80 g/cm.sup.3 or greater. This allows a zinc oxide sintered body to secure uniformity, high density, and high electric conductivity, resulting in a zinc oxide varistor with high surge resistance, capable of downsizing and cost reduction. Moreover, addition of aluminum (Al), as a donor element, to the zinc oxide powder allows control of sintered grain size in conformity with the aluminum added amount and baking temperature, and also allows adjustment of varistor voltage, etc.

Focusing on zinc oxide itself, which is a main raw material for a zinc oxide varistor (laminated varistor), a predetermined amount of additive is added to a zinc oxide powder having crystallite size of 20 to 100 nm, particle diameter of 20 to 110 nm found using a specific area BET method, untamped density of 0.60 g/cm.sup.3 or greater, and tap density of 0.80 g/cm.sup.3 or greater. This allows a zinc oxide sintered body to secure uniformity, high density, and high electric conductivity, resulting in a zinc oxide varistor with high surge resistance, capable of downsizing and cost reduction. Moreover, addition of aluminum (Al), as a donor element, to the zinc oxide powder allows control of sintered grain size in conformity with the aluminum added amount and baking temperature, and also allows adjustment of varistor voltage, etc.

The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.

A quantum dot includes a core, a first shell and a second shell. The core includes a group III-V compound. The first shell includes a second semiconductor nanocrystal. The second semiconductor nanocrystal includes zinc, selenium and a dopant including tellurium. The second shell includes a third semiconductor nanocrystal. The third semiconductor nanocrystal includes a II-VI compound.

The disclosure provides a method of producing a metal compound. The method comprises contacting a metal source with a reaction mixture, wherein the reaction mixture comprises an ionic liquid and an oxidising agent, and thereby producing the metal compound.

The disclosure provides a method of producing a metal compound. The method comprises contacting a metal source with a reaction mixture, wherein the reaction mixture comprises an ionic liquid and an oxidising agent, and thereby producing the metal compound.

A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.