The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.

There is provided a structure manufacturing method, including: preparing an etching target with at least one surface comprising group III nitride; then in a state where the etching target is immersed in an etching solution containing peroxodisulfate ions; irradiating the surface of the etching target with light through the etching solution, and generating sulfate ion radicals from the peroxodisulfate ions and generating holes in the group III nitride, thereby etching the group III nitride, wherein in the etching of the group III nitride, the etching solution remains acidic during a period for etching the group III nitride by making the etching solution acidic at a start of etching the group III nitride, and the etching is performed, with a resist mask formed on the surface.

There is provided a structure manufacturing method, including: preparing an etching target with at least one surface comprising group III nitride; then in a state where the etching target is immersed in an etching solution containing peroxodisulfate ions; irradiating the surface of the etching target with light through the etching solution, and generating sulfate ion radicals from the peroxodisulfate ions and generating holes in the group III nitride, thereby etching the group III nitride, wherein in the etching of the group III nitride, the etching solution remains acidic during a period for etching the group III nitride by making the etching solution acidic at a start of etching the group III nitride, and the etching is performed, with a resist mask formed on the surface.

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

A single-crystal β-Ga.sub.2O.sub.3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga.sub.2O.sub.3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga.sub.2O.sub.3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate; and grinding the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga.sub.2O.sub.3 MSM detector.

A single-crystal β-Ga.sub.2O.sub.3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga.sub.2O.sub.3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga.sub.2O.sub.3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate; and grinding the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga.sub.2O.sub.3 MSM detector.

The invention relates to a method for producing a medical electrode, comprising the following steps: (i) providing a substrate; (ii) applying a composition onto the substrate, wherein the composition comprises (a) a non-aqueous solvent and (b) an organic iridium complex compound dissolved in the solvent; (iii) heating the composition, and thereby forming a noble metal layer on the substrate.

The invention relates to a method for producing a medical electrode, comprising the following steps: (i) providing a substrate; (ii) applying a composition onto the substrate, wherein the composition comprises (a) a non-aqueous solvent and (b) an organic iridium complex compound dissolved in the solvent; (iii) heating the composition, and thereby forming a noble metal layer on the substrate.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.