A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Disclosed herein are methods preparing a purified, carrier-free 68Ga solution. Tire present disclosure also provides systems for preparing a purified, carrier-free 68Ga solution. The present disclosure also provides compositions comprising the purified, carrier-free 68Ga solutions disclosed herein. Also provided are methods of administering compositions of the present disclosure to a patient in need thereof, for example, for imaging a disease or disorder, such as cancer.

A carbon cloth/gallium oxynitride has a chemical formula of GaO.sub.xN.sub.y, where x=0.1-0.3 and y=0.7-0.9; and has a N/O molar ratio of 2.3 to 9. The carbon cloth/gallium oxynitride is a composite formed by loading gallium oxynitride nanoparticles on carbon cloth fibers, wherein the gallium oxynitride nanoparticles have a size range of 10 to 70 nm, and the carbon cloth/gallium oxynitride has a discharge specific capacitance of 30 to 865 mF cm.sup.−2 at current densities ranging from 0.5 to 100 mA cm.sup.−2. The working electrode is made from the carbon cloth/gallium oxynitride; and the supercapacitor is composed of the carbon cloth/gallium oxynitride working electrodes, a separator, an electrolyte, and an outer package.

A carbon cloth/gallium oxynitride has a chemical formula of GaO.sub.xN.sub.y, where x=0.1-0.3 and y=0.7-0.9; and has a N/O molar ratio of 2.3 to 9. The carbon cloth/gallium oxynitride is a composite formed by loading gallium oxynitride nanoparticles on carbon cloth fibers, wherein the gallium oxynitride nanoparticles have a size range of 10 to 70 nm, and the carbon cloth/gallium oxynitride has a discharge specific capacitance of 30 to 865 mF cm.sup.−2 at current densities ranging from 0.5 to 100 mA cm.sup.−2. The working electrode is made from the carbon cloth/gallium oxynitride; and the supercapacitor is composed of the carbon cloth/gallium oxynitride working electrodes, a separator, an electrolyte, and an outer package.

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and/or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and/or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.