A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.

Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

The present invention provides a two-dimensional double perovskite nanomaterial represented by the formula Cs.sub.2ABX.sub.6 or L.sub.4[Cs.sub.2ABX.sub.6].sub.n-1ABX.sub.8, wherein A is a metal ion selected from Ag(I), Au(I), and Cu(I); B is a metal ion selected from In(III), Bi(III), Sb(III), Fe(III), and Tl(III); X is a halogen; L is a ligand; and n represents the number of metal-halide octahedral layers present in said nanomaterial. The invention further provides a light emitting material and electronic-, optic-, or optoelectronic device comprising said nanomaterial; as well as methods for the preparation of said nanomaterial.

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

A gallium oxide substrate includes first and second main surfaces. When measured data z.sub.0(r,θ) of height differences of points (r,θ,z) on the first main surface from a least square plane of the first main surface are approximated by a function z(r,θ)=Σa.sub.nmz.sub.nm(r,θ), a ratio of a first maximum height difference of a component of z(r,θ) obtained by summing terms a.sub.nmz.sub.nm(r,θ) with an index j of 4, 9, 16, 25, 36, 49, 64, and 81, when the second main surface is placed facing a horizontal flat surface, to a diameter of the first main surface is 0.39×10.sup.−4 or less, and a ratio of a second maximum height difference of a component of z(r,θ) obtained by summing terms a.sub.nmz.sub.nm(r,θ) with j of from 4 to 81, when an entire surface of the second main surface is adsorbed to a flat chuck surface, to the diameter is 0.59×10.sup.−4 or less.

A gallium oxide substrate includes first and second main surfaces. When measured data z.sub.0(r,θ) of height differences of points (r,θ,z) on the first main surface from a least square plane of the first main surface are approximated by a function z(r,θ)=Σa.sub.nmz.sub.nm(r,θ), a ratio of a first maximum height difference of a component of z(r,θ) obtained by summing terms a.sub.nmz.sub.nm(r,θ) with an index j of 4, 9, 16, 25, 36, 49, 64, and 81, when the second main surface is placed facing a horizontal flat surface, to a diameter of the first main surface is 0.39×10.sup.−4 or less, and a ratio of a second maximum height difference of a component of z(r,θ) obtained by summing terms a.sub.nmz.sub.nm(r,θ) with j of from 4 to 81, when an entire surface of the second main surface is adsorbed to a flat chuck surface, to the diameter is 0.59×10.sup.−4 or less.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.