Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

A film-forming method in which film-formation is performed by heat-treating a mist of a raw material solution, the method including: dissolving metal gallium in an acidic solution containing at least one of hydrobromic acid and hydroiodic acid to prepare the raw material solution having a concentration of a metal impurity of less than 2%; and atomizing the raw material solution into a mist, and performing film-forming. This method can provide a film-forming method that can form a film having good crystallinity at a high film-forming rate.

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodispersed nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodispersed nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

A carbon cloth/gallium oxynitride has a chemical formula of GaO.sub.xN.sub.y, where x=0.1-0.3 and y=0.7-0.9; and has a N/O molar ratio of 2.3 to 9. The carbon cloth/gallium oxynitride is a composite formed by loading gallium oxynitride nanoparticles on carbon cloth fibers, wherein the gallium oxynitride nanoparticles have a size range of 10 to 70 nm, and the carbon cloth/gallium oxynitride has a discharge specific capacitance of 30 to 865 mF cm.sup.−2 at current densities ranging from 0.5 to 100 mA cm.sup.−2. The working electrode is made from the carbon cloth/gallium oxynitride; and the supercapacitor is composed of the carbon cloth/gallium oxynitride working electrodes, a separator, an electrolyte, and an outer package.

A carbon cloth/gallium oxynitride has a chemical formula of GaO.sub.xN.sub.y, where x=0.1-0.3 and y=0.7-0.9; and has a N/O molar ratio of 2.3 to 9. The carbon cloth/gallium oxynitride is a composite formed by loading gallium oxynitride nanoparticles on carbon cloth fibers, wherein the gallium oxynitride nanoparticles have a size range of 10 to 70 nm, and the carbon cloth/gallium oxynitride has a discharge specific capacitance of 30 to 865 mF cm.sup.−2 at current densities ranging from 0.5 to 100 mA cm.sup.−2. The working electrode is made from the carbon cloth/gallium oxynitride; and the supercapacitor is composed of the carbon cloth/gallium oxynitride working electrodes, a separator, an electrolyte, and an outer package.

A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C.sub.5H.sub.4R.sup.1—In) as a main component, also containing at least one component selected from alkylcyclopentediene (C.sub.5H.sub.5R.sup.2), dialkylcyclopentadiene ((C.sub.5H.sub.5R.sup.3).sub.2), trisalkylcyclopentadienylindium (III) ((C.sub.5H.sub.4R.sup.4).sub.3—In) and triscyclopentadienyl indium (III) as secondary components (wherein R.sup.1 to R.sup.4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.