A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C.sub.5H.sub.4R.sup.1—In) as a main component, also containing at least one component selected from alkylcyclopentediene (C.sub.5H.sub.5R.sup.2), dialkylcyclopentadiene ((C.sub.5H.sub.5R.sup.3).sub.2), trisalkylcyclopentadienylindium (III) ((C.sub.5H.sub.4R.sup.4).sub.3—In) and triscyclopentadienyl indium (III) as secondary components (wherein R.sup.1 to R.sup.4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In.sub.1+δGa.sub.1−δO.sub.3(ZnO).sub.m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In.sub.xGa.sub.yO.sub.3(ZnO).sub.m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).

Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A.sup.1, and A.sup.2; and a shell covering the core. A.sup.1 is a Group V element, A.sup.2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A.sup.2, and includes indium and A.sup.1, and the second region includes indium, A.sup.1, and A.sup.2, and indium and A.sup.2 are alloyed with each other in the second region.

Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Na.sub.1-xIn.sub.yAs.sub.z (0≤x<1.0, 0.8≤y≤1.2, 1.2≤z≤1.8).

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

A method for preparing a complex comprising a radioisotope of gallium for use in radiotherapy or in a medical imaging procedure, said method comprising adding a gallium radioisotope solution obtained directly from a gallium radionuclide generator to a composition comprising a pharmaceutically acceptable buffer and optionally also a pharmaceutically acceptable basic reagent, in amounts sufficient to increase the pH to a level in the range of 3 to 8, wherein the composition further comprises a chelator that is able to chelate radioactive gallium within said pH range and at moderate temperature, said chelator being optionally linked to a biological targeting agent. Kits and compositions for use in the method are also described and claimed.

A method for preparing a complex comprising a radioisotope of gallium for use in radiotherapy or in a medical imaging procedure, said method comprising adding a gallium radioisotope solution obtained directly from a gallium radionuclide generator to a composition comprising a pharmaceutically acceptable buffer and optionally also a pharmaceutically acceptable basic reagent, in amounts sufficient to increase the pH to a level in the range of 3 to 8, wherein the composition further comprises a chelator that is able to chelate radioactive gallium within said pH range and at moderate temperature, said chelator being optionally linked to a biological targeting agent. Kits and compositions for use in the method are also described and claimed.