A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.

Method for storing and/or transporting GaCl.sub.3 involving the step of adding an aluminium compounds of the formula R.sub.3-xAlCl.sub.x, wherein R is a linear or branched alkyl group with 1-8 carbon atoms and x is 0 or 1, to said GaCl.sub.3 in an Al/Ga molar ratio of at least 0.2, thereby forming a liquid formulation, followed by introducing said liquid formulation in a container.

Method for storing and/or transporting GaCl.sub.3 involving the step of adding an aluminium compounds of the formula R.sub.3-xAlCl.sub.x, wherein R is a linear or branched alkyl group with 1-8 carbon atoms and x is 0 or 1, to said GaCl.sub.3 in an Al/Ga molar ratio of at least 0.2, thereby forming a liquid formulation, followed by introducing said liquid formulation in a container.

Methods for rapid isolation of radionuclides (e.g., .sup.68Ga) produced using a cyclotron and methods for recycling of the parent isotope (e.g., .sup.68Zn) are disclosed. In one version of the method, a solution including a radionuclide (e.g., .sup.68Ga) is created from a target including cations (e.g., .sup.68Zn). The solution including the radionuclide is passed through a first column including a sorbent comprising a hydroxamate resin to adsorb the radionuclide on the sorbent, and the radionuclide is eluted off the sorbent. The cations (e.g., .sup.68Zn) are recovered from a recovery solution that has passed through the first column by passing the recovery solution through a second column including a second sorbent comprising a cation exchange resin.

Methods for rapid isolation of radionuclides (e.g., .sup.68Ga) produced using a cyclotron and methods for recycling of the parent isotope (e.g., .sup.68Zn) are disclosed. In one version of the method, a solution including a radionuclide (e.g., .sup.68Ga) is created from a target including cations (e.g., .sup.68Zn). The solution including the radionuclide is passed through a first column including a sorbent comprising a hydroxamate resin to adsorb the radionuclide on the sorbent, and the radionuclide is eluted off the sorbent. The cations (e.g., .sup.68Zn) are recovered from a recovery solution that has passed through the first column by passing the recovery solution through a second column including a second sorbent comprising a cation exchange resin.

Provided are a device and a method for synthesis of a gallium-containing garnet-structured scintillator polycrystalline material. The synthesis device includes a polycrystalline material synthesis chamber (7) made of a thermal insulation material (1); a crucible (3) arranged at the center of the bottom of the polycrystalline material synthesis chamber; an induction coil (2) annularly arranged outside the polycrystalline material synthesis chamber at a position with a height corresponding to that of the crucible; an arc heating device (4) arranged on a central axis of the induction coil in the polycrystalline material synthesis chamber, so as to heat and melt raw materials at the center of the crucible by means of the high temperature generated by arc discharge; the induction coil is connected to a RF induction power supply.