Patent classifications
C01G15/00
LAYERED GaN AND GaN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME
Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by M.sub.1-xGa.sub.yN.sub.z (M is at least one of Group II elements, and 0<x≤1.0, 0.6≤y≤1.25, 0.75≤z≤1.5).
Quantum dot and method for producing the same
To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgIn.sub.xGa.sub.1-xS.sub.ySe.sub.1-y or ZnAgIn.sub.xGa.sub.1-xS.sub.ySe.sub.1-y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.
SULFIDE PHOSPHOR AND LIGHT-EMITTING DEVICE COMPRISING THE SAME
The present invention relates to a sulfide phosphor including a parent body containing one or more selected from Ba, Li, and S, and Al and Ga as constituent elements, wherein one or more activators selected from Eu and Ce are employed to the parent body.
LIGHT-EMITTING BODY, METHOD FOR PRODUCING LIGHT-EMITTING BODY, AND BIOLOGICAL MATERIAL LABELING AGENT
A dispersion that includes water and a light-emitting body dispersed in the water. The light-emitting body contains a nanoparticle of a AgInSe compound semiconductor, and a film to which hydrophilicity is imparted by ultrasonic irradiation on a surface of the nanoparticle. The film has a double structure having a first organic molecular film containing an alkylthiol and a second organic molecular film composed mainly of a fatty acid. The light-emitting body has an emission quantum yield of 10% or more, an emission intensity peak wavelength in the range of 650 to 1000 nm, and a half-width ΔH of 100 nm or less at the emission intensity peak wavelength.
Intermediate temperature solid oxide fuel cell cathode material
An intermediate temperature solid oxide fuel cell (IT-SOFC) includes an anode layer, an electrolyte adjacent to the anode layer, and a cathode layer adjacent to the electrolyte and including a material of formula (I) or (II): Sr.sub.2OsO.sub.4 (I) or Ba.sub.2MO.sub.4 (II), where M is a transition metal or post-transition metal.
Intermediate temperature solid oxide fuel cell cathode material
An intermediate temperature solid oxide fuel cell (IT-SOFC) includes an anode layer, an electrolyte adjacent to the anode layer, and a cathode layer adjacent to the electrolyte and including a material of formula (I) or (II): Sr.sub.2OsO.sub.4 (I) or Ba.sub.2MO.sub.4 (II), where M is a transition metal or post-transition metal.
STRUCTURE MANUFACTURING METHOD, STRUCTURE MANUFACTURING APPARATUS AND INTERMEDIATE STRUCTURE
There is provided a structure manufacturing method, including: preparing an etching target with at least one surface comprising group III nitride; then in a state where the etching target is immersed in an etching solution containing peroxodisulfate ions, irradiating the surface of the etching target with light through the etching solution, and generating sulfate ion radicals from the peroxodisulfate ions and generating holes in the group III nitride, thereby etching the group III nitride, wherein in the etching of the group III nitride, the etching solution remains acidic during a period for etching the group III nitride by making the etching solution acidic at a start of etching the group III nitride, and the etching is performed, with a resist mask formed on the surface.
LAMINATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING LAMINATE
The present invention is a laminate including: a crystal substrate; a middle layer formed on a main surface of the crystal substrate, the middle layer containing a mixture of an amorphous region in an amorphous phase and a crystal region in a crystal phase having a corundum structure mainly made of a first metal oxide; and a crystal layer formed on the middle layer and having a corundum structure mainly made of a second metal oxide. Thus, provided is a laminate having high-quality corundum-structured crystal with sufficiently suppressed crystal defects.
METHOD FOR EXTRACTION AND PURIFICATION OF 68GA
Disclosed herein are methods preparing a purified, carrier-free 68Ga solution. Tire present disclosure also provides systems for preparing a purified, carrier-free 68Ga solution. The present disclosure also provides compositions comprising the purified, carrier-free 68Ga solutions disclosed herein. Also provided are methods of administering compositions of the present disclosure to a patient in need thereof, for example, for imaging a disease or disorder, such as cancer.
COMPOUND
A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.